IMR OpenIR
Synthesis and characterization of boron doped diamond/beta-SiC composite films
Fu, Haiyuan; Zhuang, Hao; Yang, Liang; Hantschel, Thomas; Ma, Song; Zhang, Zhidong; Jiang, Xin; Jiang, X (reprint author), Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany.
2017-01-16
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume110Issue:3Pages:-
AbstractBoron doped diamond/beta-SiC composite films with a conductive diamond phase separated by the insulating beta-SiC phase are fabricated by the microwave plasma chemical vapor deposition process. By manipulating the gas phase composition during the film deposition, the boron incorporation and diamond/beta-SiC ratio in the composite film are well controlled. Scanning electron microscopy, transmission electron microscopy, Raman and X-ray diffraction measurements are carried out to study the structural composition of the films. It is observed that the introduction of boron during the growth process does not affect the independent growth of diamond and beta-SiC crystals with high crystal quality. Scanning spreading resistance microscopy measurements confirm the presence of the conductive diamond phase and the insulating beta-SiC phase in the film. The observed differences in the conductivities between diamond and beta-SiC are explained by the different boron acceptor levels in diamond and beta-SiC crystals. Cyclic voltammetry measurements are carried out to study the electrochemical property of the films. Our results demonstrate that boron doped diamond/ beta-SiC composite films are a good candidate for electroanalysis applications whereby exploiting diamond's high chemical and dimensional stability as well as its excellent electrochemical properties. Published by AIP Publishing.; Boron doped diamond/beta-SiC composite films with a conductive diamond phase separated by the insulating beta-SiC phase are fabricated by the microwave plasma chemical vapor deposition process. By manipulating the gas phase composition during the film deposition, the boron incorporation and diamond/beta-SiC ratio in the composite film are well controlled. Scanning electron microscopy, transmission electron microscopy, Raman and X-ray diffraction measurements are carried out to study the structural composition of the films. It is observed that the introduction of boron during the growth process does not affect the independent growth of diamond and beta-SiC crystals with high crystal quality. Scanning spreading resistance microscopy measurements confirm the presence of the conductive diamond phase and the insulating beta-SiC phase in the film. The observed differences in the conductivities between diamond and beta-SiC are explained by the different boron acceptor levels in diamond and beta-SiC crystals. Cyclic voltammetry measurements are carried out to study the electrochemical property of the films. Our results demonstrate that boron doped diamond/ beta-SiC composite films are a good candidate for electroanalysis applications whereby exploiting diamond's high chemical and dimensional stability as well as its excellent electrochemical properties. Published by AIP Publishing.
description.department[fu, haiyuan ; zhuang, hao ; jiang, xin] univ siegen, inst mat engn, paul bonatz str 9-11, d-57076 siegen, germany ; [yang, liang ; ma, song ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [hantschel, thomas] imec, kapeldreef 75, b-3001 leuven, belgium
Subject AreaPhysics, Applied
Funding OrganizationDeutsche Forschungsgemeinschaft (DFG) [JI 22/24-1]; National Natural Science Foundation of China [51271178, 51571195, 51590883]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/78337
Collection中国科学院金属研究所
Corresponding AuthorJiang, X (reprint author), Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany.
Recommended Citation
GB/T 7714
Fu, Haiyuan,Zhuang, Hao,Yang, Liang,et al. Synthesis and characterization of boron doped diamond/beta-SiC composite films[J]. APPLIED PHYSICS LETTERS,2017,110(3):-.
APA Fu, Haiyuan.,Zhuang, Hao.,Yang, Liang.,Hantschel, Thomas.,Ma, Song.,...&Jiang, X .(2017).Synthesis and characterization of boron doped diamond/beta-SiC composite films.APPLIED PHYSICS LETTERS,110(3),-.
MLA Fu, Haiyuan,et al."Synthesis and characterization of boron doped diamond/beta-SiC composite films".APPLIED PHYSICS LETTERS 110.3(2017):-.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Fu, Haiyuan]'s Articles
[Zhuang, Hao]'s Articles
[Yang, Liang]'s Articles
Baidu academic
Similar articles in Baidu academic
[Fu, Haiyuan]'s Articles
[Zhuang, Hao]'s Articles
[Yang, Liang]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Fu, Haiyuan]'s Articles
[Zhuang, Hao]'s Articles
[Yang, Liang]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.