Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms

IMR OpenIR

	Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms
	Lao, Yuanxia; Hu, Shuanglin; Shi, Yunlong; Deng, Yu; Wang, Fei; Du, Hao; Zhang, Haibing; Wang, Yuan; Wang, Y (reprint author), Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China.; Zhang, HB (reprint author), China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621900, Peoples R China.
	2017-01-05
发表期刊	SCIENTIFIC REPORTS
ISSN	2045-2322
卷号	7 页码:-
摘要	Materials with a high density of heterophase interfaces, which are capable of absorbing and annihilating radiation-induced point defects, can exhibit a superior radiation tolerance. In this paper, we investigated the interaction behaviors of point defects and heterophase interfaces by implanting helium atoms into the ZrN/TaN multilayered nanofilms. It was found that the point defect-interface interaction on the two sides of the ZrN/TaN interface was asymmetric, likely due to the difference in the vacancy formation energies of ZrN and TaN. The helium bubbles could migrate from the ZrN layers into the TaN layers through the heterophase interfaces, resulting in a better crystallinity of the ZrN layers and a complete amorphization of the TaN layers. The findings provided some clues to the fundamental behaviors of point defects near the heterophase interfaces, which make us re-examine the design rules of advanced radiation-tolerant materials.; Materials with a high density of heterophase interfaces, which are capable of absorbing and annihilating radiation-induced point defects, can exhibit a superior radiation tolerance. In this paper, we investigated the interaction behaviors of point defects and heterophase interfaces by implanting helium atoms into the ZrN/TaN multilayered nanofilms. It was found that the point defect-interface interaction on the two sides of the ZrN/TaN interface was asymmetric, likely due to the difference in the vacancy formation energies of ZrN and TaN. The helium bubbles could migrate from the ZrN layers into the TaN layers through the heterophase interfaces, resulting in a better crystallinity of the ZrN layers and a complete amorphization of the TaN layers. The findings provided some clues to the fundamental behaviors of point defects near the heterophase interfaces, which make us re-examine the design rules of advanced radiation-tolerant materials.
部门归属	[lao, yuanxia ; shi, yunlong ; wang, fei ; wang, yuan] sichuan univ, inst nucl sci & technol, minist educ, key lab radiat phys & technol, chengdu 610064, peoples r china ; [hu, shuanglin ; zhang, haibing] china acad engn phys, inst nucl phys & chem, mianyang 621900, peoples r china ; [deng, yu] nanjing univ, sch phys, nanjing 210093, jiangsu, peoples r china ; [du, hao] chinese acad sci, inst met res, div surface engn mat, shenyang 110016, peoples r china
学科领域	Multidisciplinary Sciences
资助者	National Natural Science Foundation of China [11505121, 51171124, 91326102, 51532009]; International Science and Technology Cooperation Program of China [2014DFR50710]; Scientific and Technical Supporting Programs - Science and Technology Department of Sichuan Province [2014GZ0004]; Science and Technology Development Foundation of China Academy of Engineering Physics [2013A0301012]; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund; National Super-Computing Center at Guangzhou; Youth Hundred Talents Project of Sichuan Province
收录类别	SCI
语种	英语
WOS记录号	WOS:000391257600001
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/78348
专题	中国科学院金属研究所
通讯作者	Wang, Y (reprint author), Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China.; Zhang, HB (reprint author), China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621900, Peoples R China.
推荐引用方式 GB/T 7714	Lao, Yuanxia,Hu, Shuanglin,Shi, Yunlong,et al. Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms[J]. SCIENTIFIC REPORTS,2017,7:-.
APA	Lao, Yuanxia.,Hu, Shuanglin.,Shi, Yunlong.,Deng, Yu.,Wang, Fei.,...&Zhang, HB .(2017).Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms.SCIENTIFIC REPORTS,7,-.
MLA	Lao, Yuanxia,et al."Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms".SCIENTIFIC REPORTS 7(2017):-.