Direct observation of the layer-dependent electronic structure in phosphorene

IMR OpenIR

	Direct observation of the layer-dependent electronic structure in phosphorene
	Li, Likai; Kim, Jonghwan; Jin, Chenhao; Ye, Guo Jun; Qiu, Diana Y.; da Jornada, Felipe H.; Shi, Zhiwen; Chen, Long; Zhang, Zuocheng; Yang, Fangyuan; Watanabe, Kenji; Taniguchi, Takashi; Ren, Wencai; Louie, Steven G.; Chen, Xian Hui; Zhang, Yuanbo; Wang, Feng; Zhang, YB (reprint author), Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China.; Zhang, YB (reprint author), Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.; Chen, XH; Zhang, YB (reprint author), Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China.; Louie, SG; Wang, F (reprint author), Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA.; Chen, XH (reprint author), Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China.; Chen, XH (reprint author), Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China.; Chen, XH (reprint author), Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China.; Wang, F (reprint author), Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.; Wang, F (reprint author), Univ Calif Berkeley, Berkeley & Lawrence Berkeley Natl Lab, Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA.
	2017
发表期刊	NATURE NANOTECHNOLOGY
ISSN	1748-3387
卷号	12 期号:1 页码:21-25
摘要	Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new two-dimensional (2D) material that holds promise for electronic and photonic technologies(1-5). Here we experimentally demonstrate that the electronic structure of few-layer phosphorene varies significantly with the number of layers, in good agreement with theoretical predictions. The interband optical transitions cover a wide, technologically important spectral range from the visible to the mid-infrared. In addition, we observe strong photoluminescence in few-layer phosphorene at energies that closely match the absorption edge, indicating that they are direct bandgap semiconductors. The strongly layer-dependent electronic structure of phosphorene, in combination with its high electrical mobility, gives it distinct advantages over other 2D materials in electronic and opto-electronic applications.; Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new two-dimensional (2D) material that holds promise for electronic and photonic technologies(1-5). Here we experimentally demonstrate that the electronic structure of few-layer phosphorene varies significantly with the number of layers, in good agreement with theoretical predictions. The interband optical transitions cover a wide, technologically important spectral range from the visible to the mid-infrared. In addition, we observe strong photoluminescence in few-layer phosphorene at energies that closely match the absorption edge, indicating that they are direct bandgap semiconductors. The strongly layer-dependent electronic structure of phosphorene, in combination with its high electrical mobility, gives it distinct advantages over other 2D materials in electronic and opto-electronic applications.
部门归属	[li, likai ; zhang, zuocheng ; yang, fangyuan ; zhang, yuanbo] fudan univ, state key lab surface phys, shanghai 200433, peoples r china ; [li, likai ; zhang, zuocheng ; yang, fangyuan ; zhang, yuanbo] fudan univ, dept phys, shanghai 200433, peoples r china ; [li, likai ; ye, guo jun ; zhang, zuocheng ; yang, fangyuan ; chen, xian hui ; zhang, yuanbo] collaborat innovat ctr adv microstruct, nanjing 210093, jiangsu, peoples r china ; [kim, jonghwan ; jin, chenhao ; qiu, diana y. ; da jornada, felipe h. ; shi, zhiwen ; louie, steven g. ; wang, feng] univ calif berkeley, dept phys, berkeley, ca 94720 usa ; [ye, guo jun ; chen, xian hui] univ sci & technol china, hefei natl lab phys sci microscale, hefei 230026, anhui, peoples r china ; [ye, guo jun ; chen, xian hui] univ sci & technol china, dept phys, hefei 230026, anhui, peoples r china ; [ye, guo jun ; chen, xian hui] univ sci & technol china, key lab strongly coupled quantum matter phys, hefei 230026, anhui, peoples r china ; [qiu, diana y. ; da jornada, felipe h. ; louie, steven g. ; wang, feng] lawrence berkeley natl lab, div mat sci, berkeley, ca 94720 usa ; [chen, long ; ren, wencai] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china ; [watanabe, kenji ; taniguchi, takashi] natl inst mat sci, adv mat lab, 1-1 namiki, tsukuba, ibaraki 3050044, japan ; [wang, feng] univ calif berkeley, berkeley & lawrence berkeley natl lab, kavli energy nanosci inst, berkeley, ca 94720 usa
学科领域	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
资助者	NSF of China [11425415, 11421404, 11534010]; National Basic Research Program of China (973 Program) [2013CB921902, 2012CB922002]; National Science Foundation EFRI program [EFMA-1542741]; Samsung Global Research Outreach (GRO) Program; 'Strategic Priority Research Program' of the Chinese Academy of Sciences [XDB04040100]; Elemental Strategy Initiative conducted by the MEXT, Japan; JSPS [262480621, 25106006]; Theory of Materials Program at the Lawrence Berkeley National Laboratory through the Office of Basic Energy Sciences, US Department of Energy [DE-AC02-05CH11231]; National Science Foundation [DMR-1508412, ACI-1053575]; NSF Graduate Research Fellowship [DGE 1106400]; Office of Science of the US Department of Energy; Extreme Science and Engineering Discovery Environment (XSEDE)
收录类别	SCI
语种	英语
WOS记录号	WOS:000392042400008
引用统计	被引频次：634[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/78378
专题	中国科学院金属研究所
通讯作者	Zhang, YB (reprint author), Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China.; Zhang, YB (reprint author), Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.; Chen, XH; Zhang, YB (reprint author), Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China.; Louie, SG; Wang, F (reprint author), Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA.; Chen, XH (reprint author), Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China.; Chen, XH (reprint author), Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China.; Chen, XH (reprint author), Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China.; Wang, F (reprint author), Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.; Wang, F (reprint author), Univ Calif Berkeley, Berkeley & Lawrence Berkeley Natl Lab, Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA.
推荐引用方式 GB/T 7714	Li, Likai,Kim, Jonghwan,Jin, Chenhao,et al. Direct observation of the layer-dependent electronic structure in phosphorene[J]. NATURE NANOTECHNOLOGY,2017,12(1):21-25.
APA	Li, Likai.,Kim, Jonghwan.,Jin, Chenhao.,Ye, Guo Jun.,Qiu, Diana Y..,...&Wang, F .(2017).Direct observation of the layer-dependent electronic structure in phosphorene.NATURE NANOTECHNOLOGY,12(1),21-25.
MLA	Li, Likai,et al."Direct observation of the layer-dependent electronic structure in phosphorene".NATURE NANOTECHNOLOGY 12.1(2017):21-25.