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一种降低氮化镓纳米线阵列晶体缺陷密度的方法
姜辛,刘宝丹
2016-03-16
Rights Holder姜辛,刘宝丹
Date Available2016-03-16
Country中国
Subtype发明
Abstract一种降低氮化镓纳米线阵列晶体缺陷密度的方法
description.department中国科学院金属研究所
Application Date2012-07-06
Language中文
Application Number201210234053.0
Document Type专利
Identifierhttp://ir.imr.ac.cn/handle/321006/78740
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
姜辛,刘宝丹. 一种降低氮化镓纳米线阵列晶体缺陷密度的方法[P]. 2016-03-16.
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