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The nucleation and growth mechanism of Ni-Sn eutectic in a single crystal superalloy
Jiang, Weiguo; Wang, Li; Li, Xiangwei; Lou, Langhong; Jiang, WG (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.
2017-12-01
Source PublicationELSEVIER SCIENCE BV
ISSN0022-0248
Volume479Pages:75-82
AbstractThe microstructure of single crystal superalloy with and without tin layer on the surface of as-cast and heat-treatment state was investigated by optical microscope (OM) and scanning electron microscopy (SEM). The composition of different regions on the surface was tested by energy dispersive X-ray (EDS). The reaction intermetallic compound (IMC) formed in the heat treatment process was confirmed by X-ray diffraction (XRD). The orientations of different microstructure in samples as heat treatment state were determined by electron back-scattering diffraction (EBSD) method. The porosity location in the interdendritic region was observed by X-ray computed tomography (XCT). The experiment results showed that the remained Sn on the surface of the superalloy reacted with Ni, and then formed Ni3Sn4 in the as-cast state. Sn enriched by diffusion along the porosity located in the interdendritic region and gamma + gamma' (contain a little of Sn) eutectic and Ni3Sn2 formed in single crystal superalloy during heat treatment, and the recalescence behaviors were found. Ni3Sn2 nucleated independently in the cooled liquid at the front of (gamma + gamma') (Sn) eutectic. The nucleation and growth mechanism of the eutectic and Ni3Sn2 IMC during heat treatment was discussed in the present paper. (C) 2017 Elsevier B.V. All rights reserved.; The microstructure of single crystal superalloy with and without tin layer on the surface of as-cast and heat-treatment state was investigated by optical microscope (OM) and scanning electron microscopy (SEM). The composition of different regions on the surface was tested by energy dispersive X-ray (EDS). The reaction intermetallic compound (IMC) formed in the heat treatment process was confirmed by X-ray diffraction (XRD). The orientations of different microstructure in samples as heat treatment state were determined by electron back-scattering diffraction (EBSD) method. The porosity location in the interdendritic region was observed by X-ray computed tomography (XCT). The experiment results showed that the remained Sn on the surface of the superalloy reacted with Ni, and then formed Ni3Sn4 in the as-cast state. Sn enriched by diffusion along the porosity located in the interdendritic region and gamma + gamma' (contain a little of Sn) eutectic and Ni3Sn2 formed in single crystal superalloy during heat treatment, and the recalescence behaviors were found. Ni3Sn2 nucleated independently in the cooled liquid at the front of (gamma + gamma') (Sn) eutectic. The nucleation and growth mechanism of the eutectic and Ni3Sn2 IMC during heat treatment was discussed in the present paper. (C) 2017 Elsevier B.V. All rights reserved.
description.department[jiang, weiguo ; wang, li ; li, xiangwei ; lou, langhong] chinese acad sci, inst met res, shenyang 110016, liaoning, peoples r china
KeywordCrystal Structure Growth From Melt Solid Phase Epitaxy Alloys
Subject AreaCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/78965
Collection中国科学院金属研究所
Corresponding AuthorJiang, WG (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.
Recommended Citation
GB/T 7714
Jiang, Weiguo,Wang, Li,Li, Xiangwei,et al. The nucleation and growth mechanism of Ni-Sn eutectic in a single crystal superalloy[J]. ELSEVIER SCIENCE BV,2017,479:75-82.
APA Jiang, Weiguo,Wang, Li,Li, Xiangwei,Lou, Langhong,&Jiang, WG .(2017).The nucleation and growth mechanism of Ni-Sn eutectic in a single crystal superalloy.ELSEVIER SCIENCE BV,479,75-82.
MLA Jiang, Weiguo,et al."The nucleation and growth mechanism of Ni-Sn eutectic in a single crystal superalloy".ELSEVIER SCIENCE BV 479(2017):75-82.
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