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Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC
Hua, An; Wei, Feng; Pan, Desheng; Yang, Liang; Feng, Yang; Li, Mingze; Wang, Yu; An, Jing; Geng, Dianyu; Liu, Hongyang; Wang, Zhenhua; Liu, Wei; Ma, Song; He, Jun; Zhang, Zhidong; Ma, S (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.; He, J (reprint author), Cent Iron & Steel Res Inst, Div Funct Mat Res, Beijing 100081, Peoples R China.
2017-11-27
Source PublicationAMER INST PHYSICS
ISSN0003-6951
Volume111Issue:22Pages:-
AbstractSiC has amazing electromagnetic wave absorption properties based on its excellent dielectric properties. The optimized N-doping nano-SiC with in-situ tailored morphology by a facile one-step synthesis strategy is presented. By using a new N source and gas catalyst, acetonitrile (C2H3N) was exploited to synthesize N-doped nano-SiC with an evolution of morphology from spherical to nanoflake. The surface area of the nanoflake SiC is significantly expanded to support more quantity and types of electric dipoles. Combining the optimized N concentration doping, the complex dielectric and microwave absorption properties of the tailored nano-SiC are clearly improved in the 2-18 GHz range when compared to previously reported SiC and N-doped SiC nanoparticles. The higher epsilon '' and tan delta values are attributed to fortified polarization relaxation by optimized N-doping and novel nanoflake morphology. A wideband reflection loss exceeding -10 dB (90% microwave absorption) reached 4.1 GHz with an absorber thickness of 1.58 mm. A minimum value of -42 dB at 8 GHz was also achieved. The mechanism of dielectric loss of nanoflake N-doped SiC is discussed in detail. Published by AIP Publishing.; SiC has amazing electromagnetic wave absorption properties based on its excellent dielectric properties. The optimized N-doping nano-SiC with in-situ tailored morphology by a facile one-step synthesis strategy is presented. By using a new N source and gas catalyst, acetonitrile (C2H3N) was exploited to synthesize N-doped nano-SiC with an evolution of morphology from spherical to nanoflake. The surface area of the nanoflake SiC is significantly expanded to support more quantity and types of electric dipoles. Combining the optimized N concentration doping, the complex dielectric and microwave absorption properties of the tailored nano-SiC are clearly improved in the 2-18 GHz range when compared to previously reported SiC and N-doped SiC nanoparticles. The higher epsilon '' and tan delta values are attributed to fortified polarization relaxation by optimized N-doping and novel nanoflake morphology. A wideband reflection loss exceeding -10 dB (90% microwave absorption) reached 4.1 GHz with an absorber thickness of 1.58 mm. A minimum value of -42 dB at 8 GHz was also achieved. The mechanism of dielectric loss of nanoflake N-doped SiC is discussed in detail. Published by AIP Publishing.
description.department[hua, an ; wei, feng ; pan, desheng ; yang, liang ; feng, yang ; li, mingze ; geng, dianyu ; liu, hongyang ; wang, zhenhua ; liu, wei ; ma, song ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china ; [hua, an ; pan, desheng ; li, mingze] univ sci & technol china, sch mat sci & engn, hefei 230026, anhui, peoples r china ; [wei, feng ; yang, liang ; feng, yang] univ chinese acad sci, beijing 100049, peoples r china ; [wang, yu ; an, jing ; he, jun] cent iron & steel res inst, div funct mat res, beijing 100081, peoples r china
Subject AreaPhysics, Applied
Funding OrganizationNatural Science Foundation of China (NSFC) [51571195, 51271178, 51331006, 51590883]; National Key R&D Program of China [2017YFA0206301]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/78968
Collection中国科学院金属研究所
Corresponding AuthorMa, S (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.; He, J (reprint author), Cent Iron & Steel Res Inst, Div Funct Mat Res, Beijing 100081, Peoples R China.
Recommended Citation
GB/T 7714
Hua, An,Wei, Feng,Pan, Desheng,et al. Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC[J]. AMER INST PHYSICS,2017,111(22):-.
APA Hua, An.,Wei, Feng.,Pan, Desheng.,Yang, Liang.,Feng, Yang.,...&He, J .(2017).Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC.AMER INST PHYSICS,111(22),-.
MLA Hua, An,et al."Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC".AMER INST PHYSICS 111.22(2017):-.
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