Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC

IMR OpenIR

	Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC
	Hua, An; Wei, Feng; Pan, Desheng; Yang, Liang; Feng, Yang; Li, Mingze; Wang, Yu; An, Jing; Geng, Dianyu; Liu, Hongyang; Wang, Zhenhua; Liu, Wei; Ma, Song; He, Jun; Zhang, Zhidong; Ma, S (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.; He, J (reprint author), Cent Iron & Steel Res Inst, Div Funct Mat Res, Beijing 100081, Peoples R China.
	2017-11-27
发表期刊	AMER INST PHYSICS
ISSN	0003-6951
卷号	111 期号:22 页码:-
摘要	SiC has amazing electromagnetic wave absorption properties based on its excellent dielectric properties. The optimized N-doping nano-SiC with in-situ tailored morphology by a facile one-step synthesis strategy is presented. By using a new N source and gas catalyst, acetonitrile (C2H3N) was exploited to synthesize N-doped nano-SiC with an evolution of morphology from spherical to nanoflake. The surface area of the nanoflake SiC is significantly expanded to support more quantity and types of electric dipoles. Combining the optimized N concentration doping, the complex dielectric and microwave absorption properties of the tailored nano-SiC are clearly improved in the 2-18 GHz range when compared to previously reported SiC and N-doped SiC nanoparticles. The higher epsilon '' and tan delta values are attributed to fortified polarization relaxation by optimized N-doping and novel nanoflake morphology. A wideband reflection loss exceeding -10 dB (90% microwave absorption) reached 4.1 GHz with an absorber thickness of 1.58 mm. A minimum value of -42 dB at 8 GHz was also achieved. The mechanism of dielectric loss of nanoflake N-doped SiC is discussed in detail. Published by AIP Publishing.; SiC has amazing electromagnetic wave absorption properties based on its excellent dielectric properties. The optimized N-doping nano-SiC with in-situ tailored morphology by a facile one-step synthesis strategy is presented. By using a new N source and gas catalyst, acetonitrile (C2H3N) was exploited to synthesize N-doped nano-SiC with an evolution of morphology from spherical to nanoflake. The surface area of the nanoflake SiC is significantly expanded to support more quantity and types of electric dipoles. Combining the optimized N concentration doping, the complex dielectric and microwave absorption properties of the tailored nano-SiC are clearly improved in the 2-18 GHz range when compared to previously reported SiC and N-doped SiC nanoparticles. The higher epsilon '' and tan delta values are attributed to fortified polarization relaxation by optimized N-doping and novel nanoflake morphology. A wideband reflection loss exceeding -10 dB (90% microwave absorption) reached 4.1 GHz with an absorber thickness of 1.58 mm. A minimum value of -42 dB at 8 GHz was also achieved. The mechanism of dielectric loss of nanoflake N-doped SiC is discussed in detail. Published by AIP Publishing.
部门归属	[hua, an ; wei, feng ; pan, desheng ; yang, liang ; feng, yang ; li, mingze ; geng, dianyu ; liu, hongyang ; wang, zhenhua ; liu, wei ; ma, song ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china ; [hua, an ; pan, desheng ; li, mingze] univ sci & technol china, sch mat sci & engn, hefei 230026, anhui, peoples r china ; [wei, feng ; yang, liang ; feng, yang] univ chinese acad sci, beijing 100049, peoples r china ; [wang, yu ; an, jing ; he, jun] cent iron & steel res inst, div funct mat res, beijing 100081, peoples r china
学科领域	Physics, Applied
资助者	Natural Science Foundation of China (NSFC) [51571195, 51271178, 51331006, 51590883]; National Key R&D Program of China [2017YFA0206301]
收录类别	SCI
语种	英语
WOS记录号	WOS:000416697400035
引用统计	被引频次：39[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/78968
专题	中国科学院金属研究所
通讯作者	Ma, S (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.; He, J (reprint author), Cent Iron & Steel Res Inst, Div Funct Mat Res, Beijing 100081, Peoples R China.
推荐引用方式 GB/T 7714	Hua, An,Wei, Feng,Pan, Desheng,et al. Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC[J]. AMER INST PHYSICS,2017,111(22):-.
APA	Hua, An.,Wei, Feng.,Pan, Desheng.,Yang, Liang.,Feng, Yang.,...&He, J .(2017).Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC.AMER INST PHYSICS,111(22),-.
MLA	Hua, An,et al."Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC".AMER INST PHYSICS 111.22(2017):-.