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A carbon nanotube non-volatile memory device using a photoresist gate dielectric
Sun, Yun; Wang, Bing-Wei; Hou, Peng-Xiang; Liu, Chang; Fang, Lin-Lin; Tan, Jun; Sun, Dong-Ming; Cheng, Hui-Ming; Sun, DM (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.; Cheng, HM (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China.
2017-11-01
Source PublicationPERGAMON-ELSEVIER SCIENCE LTD
ISSN0008-6223
Volume124Pages:700-707
AbstractCarbon nanotube (CNT) thin films have attracted great attention for their use in flexible electronics, including thin-film transistors (TFTs) and memory devices, due to their excellent optical, electrical and mechanical properties. The flexibility of current CNT TFTs is usually limited by the use of rigid inorganic oxide insulators. Gate dielectrics made of polymers are promising candidates that give the device the desired flexibility. Here, we present a simple and effective method to format a patterned gate insulator using photoresist polymers to fabricate high-performance and good-flexibility CNT TFTs. The contact windows in gate insulators can be easily formatted for electrical interconnections in TFTs and integrated circuits, which will much simplify the fabrication processes. The fabricated CNT TFTs with a 1000-nm-thick photoresist insulator exhibited an on-off current ratio of 10(6), a mobility of 45 cm(2) V-1 s(-1), a low operation voltage of less than 5 V, and a gate leakage current lower than 10(-11) A. A 5000-cycle bend test showed negligible changes to the mobility and on/off current ratio, demonstrating the good flexibility of the devices. A non-volatile memory device was demonstrated, showing the potential use of these flexible CNT-based electronics. (C) 2017 Elsevier Ltd. All rights reserved.; Carbon nanotube (CNT) thin films have attracted great attention for their use in flexible electronics, including thin-film transistors (TFTs) and memory devices, due to their excellent optical, electrical and mechanical properties. The flexibility of current CNT TFTs is usually limited by the use of rigid inorganic oxide insulators. Gate dielectrics made of polymers are promising candidates that give the device the desired flexibility. Here, we present a simple and effective method to format a patterned gate insulator using photoresist polymers to fabricate high-performance and good-flexibility CNT TFTs. The contact windows in gate insulators can be easily formatted for electrical interconnections in TFTs and integrated circuits, which will much simplify the fabrication processes. The fabricated CNT TFTs with a 1000-nm-thick photoresist insulator exhibited an on-off current ratio of 10(6), a mobility of 45 cm(2) V-1 s(-1), a low operation voltage of less than 5 V, and a gate leakage current lower than 10(-11) A. A 5000-cycle bend test showed negligible changes to the mobility and on/off current ratio, demonstrating the good flexibility of the devices. A non-volatile memory device was demonstrated, showing the potential use of these flexible CNT-based electronics. (C) 2017 Elsevier Ltd. All rights reserved.
description.department[sun, yun ; wang, bing-wei ; hou, peng-xiang ; liu, chang ; tan, jun ; sun, dong-ming ; cheng, hui-ming] chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, liaoning, peoples r china ; [wang, bing-wei ; hou, peng-xiang ; liu, chang ; sun, dong-ming ; cheng, hui-ming] univ sci & technol china, sch mat sci & engn, 96 jinzhai rd, hefei 230026, anhui, peoples r china ; [wang, bing-wei] univ chinese acad sci, 19 a yuquan rd, beijing 100049, peoples r china ; [fang, lin-lin] wuhan china star optoelect technol co ltd, 8 zuoling rd, wuhan 430078, hubei, peoples r china ; [cheng, hui-ming] tsinghua univ, tsinghua berkeley shenzhen inst, 1001 xueyuan rd, shenzhen 518055, peoples r china
Subject AreaChemistry, Physical ; Materials Science, Multidisciplinary
Funding OrganizationMinistry of Science and Technology of China [2016YFA0200101, 2016YFA0200102, 2016YFB04001100]; National Natural Science Foundation of China [51521091, 51532008, 51572264, 51272256, 61422406, 61574143, 51372254, 51502304]; China Postdoctoral Science Foundation [2015M58137]; Chinese Academy of Sciences [KGZD-EW-T06]; CAS/SAFEA International Partnership Program for Creative Research Teams; Thousand Talent Program for Young Outstanding Scientists; Liaoning BaiQianWan Talents Program; EU-JST Joint Project IRENA
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79015
Collection中国科学院金属研究所
Corresponding AuthorSun, DM (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.; Cheng, HM (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China.
Recommended Citation
GB/T 7714
Sun, Yun,Wang, Bing-Wei,Hou, Peng-Xiang,et al. A carbon nanotube non-volatile memory device using a photoresist gate dielectric[J]. PERGAMON-ELSEVIER SCIENCE LTD,2017,124:700-707.
APA Sun, Yun.,Wang, Bing-Wei.,Hou, Peng-Xiang.,Liu, Chang.,Fang, Lin-Lin.,...&Cheng, HM .(2017).A carbon nanotube non-volatile memory device using a photoresist gate dielectric.PERGAMON-ELSEVIER SCIENCE LTD,124,700-707.
MLA Sun, Yun,et al."A carbon nanotube non-volatile memory device using a photoresist gate dielectric".PERGAMON-ELSEVIER SCIENCE LTD 124(2017):700-707.
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