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Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
Li, Xiao-Xi; Fan, Zhi-Qiang; Liu, Pei-Zhi; Chen, Mao-Lin; Liu, Xin; Jia, Chuan-Kun; Sun, Dong-Ming; Jiang, Xiang-Wei; Han, Zheng; Bouchiat, Vincent; Guo, Jun-Jie; Chen, Jian-Hao; Zhang, Zhi-Dong; Sun, DM; Han, Z (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Han, Z (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China.; Jiang, XW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
2017-10-17
Source PublicationNATURE PUBLISHING GROUP
ISSN2041-1723
Volume8Pages:-
AbstractAtomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.; Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.
description.department[li, xiao-xi ; chen, mao-lin ; sun, dong-ming ; han, zheng ; zhang, zhi-dong] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, liaoning, peoples r china ; [li, xiao-xi ; chen, mao-lin ; sun, dong-ming ; han, zheng ; zhang, zhi-dong] univ sci & technol china, sch mat sci & engn, hefei 230026, anhui, peoples r china ; [fan, zhi-qiang ; jiang, xiang-wei] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china ; [liu, pei-zhi ; guo, jun-jie] taiyuan univ technol, minist educ, key lab interface sci & engn adv mat, taiyuan 030024, shanxi, peoples r china ; [liu, xin ; chen, jian-hao] peking univ, sch phys, int ctr quantum mat, beijing 100871, peoples r china ; [liu, xin ; chen, jian-hao] collaborat innovat ctr quantum matter, beijing 100871, peoples r china ; [jia, chuan-kun] changsha univ sci & technol, coll mat sci & engn, changsha 410114, hunan, peoples r china ; [bouchiat, vincent] univ grenoble alpes, cnrs, inst neel, f-38000 grenoble, france
Subject AreaMultidisciplinary Sciences
Funding OrganizationNational Key R&D Program of China [2017YFA0206302]; National Basic Research Program of China (973 Grant) [2013CB921900, 2014CB920900]; National Natural Science Foundation of China (NSFC) [11504385, 51627801]; NSFC [11574304, 51272256, 61422406, 61574143, 11374021, 11774010, 51331006]; Chinese Academy of Sciences-Peking University Pioneer Cooperation Team (CAS-PKU Pioneer Cooperation Team); Youth Innovation Promotion Association CAS [2016109]; MSTC grant [2016YFB04001100]; CAS [KJZD-EW-M05-3]; EU FP7 Graphene Flagship [604391]; J2D project grant from Agence Nationale de la Recherche (ANR) [ANR-15-CE24-0017]; Hsun Lee Award program of the Institute of Metal Research, CAS
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79040
Collection中国科学院金属研究所
Corresponding AuthorSun, DM; Han, Z (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Han, Z (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China.; Jiang, XW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Li, Xiao-Xi,Fan, Zhi-Qiang,Liu, Pei-Zhi,et al. Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor[J]. NATURE PUBLISHING GROUP,2017,8:-.
APA Li, Xiao-Xi.,Fan, Zhi-Qiang.,Liu, Pei-Zhi.,Chen, Mao-Lin.,Liu, Xin.,...&Jiang, XW .(2017).Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor.NATURE PUBLISHING GROUP,8,-.
MLA Li, Xiao-Xi,et al."Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor".NATURE PUBLISHING GROUP 8(2017):-.
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