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题名: Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
作者: Li, Xiao-Xi;  Fan, Zhi-Qiang;  Liu, Pei-Zhi;  Chen, Mao-Lin;  Liu, Xin;  Jia, Chuan-Kun;  Sun, Dong-Ming;  Jiang, Xiang-Wei;  Han, Zheng;  Bouchiat, Vincent;  Guo, Jun-Jie;  Chen, Jian-Hao;  Zhang, Zhi-Dong
发表日期: 2017-10-17
摘要: Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.
刊名: NATURE PUBLISHING GROUP
Appears in Collections:中国科学院金属研究所_期刊论文

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Recommended Citation:
Li, Xiao-Xi,Fan, Zhi-Qiang,Liu, Pei-Zhi,et al. Gate-controlled Reversible Rectifying Behaviour In Tunnel Contacted Atomically-thin Mos2 Transistor[J]. Nature Publishing Group,2017,8:-.

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