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Ultrafast Growth of High-Quality Monolayer WSe2 on Au
Gao, Yang; Hong, Yi-Lun; Yin, Li-Chang; Wu, Zhangting; Yang, Zhiqing; Chen, Mao-Lin; Liu, Zhibo; Ma, Teng; Sun, Dong-Ming; Ni, Zhenhua; Ma, Xiu-Liang; Cheng, Hui-Ming; Ren, Wencai; Ren, WC (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
2017-08-04
Source PublicationWILEY-V C H VERLAG GMBH
ISSN0935-9648
Volume29Issue:29Pages:-
AbstractThe ultrafast growth of high-quality uniform monolayer WSe2 is reported with a growth rate of approximate to 26 mu m s(-1) by chemical vapor deposition on reusable Au substrate, which is approximate to 2-3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter-size single-crystal WSe2 domains in approximate to 30 s and large-area continuous films in approximate to 60 s. Importantly, the ultrafast grown WSe2 shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to approximate to 143 cm(2) V-1 s(-1) and ON/OFF ratio up to 9 x 10(6) at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe2 is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe2 on Au substrate.; The ultrafast growth of high-quality uniform monolayer WSe2 is reported with a growth rate of approximate to 26 mu m s(-1) by chemical vapor deposition on reusable Au substrate, which is approximate to 2-3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter-size single-crystal WSe2 domains in approximate to 30 s and large-area continuous films in approximate to 60 s. Importantly, the ultrafast grown WSe2 shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to approximate to 143 cm(2) V-1 s(-1) and ON/OFF ratio up to 9 x 10(6) at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe2 is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe2 on Au substrate.
description.department[gao, yang ; hong, yi-lun ; yin, li-chang ; yang, zhiqing ; chen, mao-lin ; liu, zhibo ; ma, teng ; sun, dong-ming ; ma, xiu-liang ; cheng, hui-ming ; ren, wencai] chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china ; [hong, yi-lun ; chen, mao-lin] univ sci & technol china, sch mat sci & engn, 72 wenhua rd, shenyang 110016, peoples r china ; [wu, zhangting ; ni, zhenhua] southeast univ, dept phys, nanjing 211189, jiangsu, peoples r china ; [cheng, hui-ming] tsinghua berkeley shenzhen inst, shenzhen 518055, peoples r china
KeywordChemical Vapor Deposition Monolayers Ultrafast Growth Wse2
Subject AreaChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
Funding OrganizationMinistry of Science and Technology of the People's Republic of China [2016YFA0200101, 2016YFB0401104]; National Natural Science Foundation of China (NSFC) [51325205, 51290273, 51521091, 51472249, 51390473, 51272256, 61422406, 61574143]; Chinese Academy of Sciences [KGZD-EW-303-1, KGZD-EW-T06]; NSFC
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79155
Collection中国科学院金属研究所
Corresponding AuthorRen, WC (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
Recommended Citation
GB/T 7714
Gao, Yang,Hong, Yi-Lun,Yin, Li-Chang,et al. Ultrafast Growth of High-Quality Monolayer WSe2 on Au[J]. WILEY-V C H VERLAG GMBH,2017,29(29):-.
APA Gao, Yang.,Hong, Yi-Lun.,Yin, Li-Chang.,Wu, Zhangting.,Yang, Zhiqing.,...&Ren, WC .(2017).Ultrafast Growth of High-Quality Monolayer WSe2 on Au.WILEY-V C H VERLAG GMBH,29(29),-.
MLA Gao, Yang,et al."Ultrafast Growth of High-Quality Monolayer WSe2 on Au".WILEY-V C H VERLAG GMBH 29.29(2017):-.
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