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Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers
Liu, Ying; Zhu, Yin-Lian; Tang, Yun-Long; Wang, Yu-Jia; Li, Shuang; Zhang, Si-Rui; Han, Meng-Jiao; Ma, Jin-Yuan; Suriyaprakash, Jagadeesh; Ma, Xiu-Liang; Zhu, YL (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China.
2017-08-02
Source PublicationAMER CHEMICAL SOC
ISSN1944-8244
Volume9Issue:30Pages:25578-25586
AbstractFunctional oxide interfaces have received a great deal of attention owing to their intriguing physical properties induced by the interplay of lattice, orbital, charge, and spin degrees of freedom. Atomic-scale precision growth of the oxide interface opens new corridors to manipulate the correlated features in nanoelectronics devices. Here, we demonstrate that both head-to-head positively charged and tail-to-tail negatively charged BiFeO3/PbTiO3 (BFO/PTO) heterointerfaces were successfully fabricated by designing the BFO/PTO film system deliberately. Aberration-corrected scanning transmission electron microscopic mapping reveals a head-to-head polarization configuration present at the BFO/PTO interface, when the film was deposited directly on a SrTiO3 (001) substrate. The interfacial atomic structure is reconstructed, and the interfacial width is determined to be 5-6 unit cells. The polarization on both sides of the interface is remarkably enhanced. Atomic-scale structural and chemical element analyses exhibit that the reconstructed interface is rich in oxygen, which effectively compensates for the positive bound charges at the head-to-head polarized BFO/PTO interface. In contrast to the head-to-head polarization configuration, the tail-to-tail BFO/PTO interface exhibits a perfect coherency, when SrRuO3 was introduced as a buffer layer on the substrates prior to the film growth. The width of this tail-to-tail interface is estimated to be 3-4 unit cells, and oxygen vacancies are supposed to screen the negative polarization bound charge. The formation mechanism of these distinct interfaces was discussed from the perspective of charge redistribution.; Functional oxide interfaces have received a great deal of attention owing to their intriguing physical properties induced by the interplay of lattice, orbital, charge, and spin degrees of freedom. Atomic-scale precision growth of the oxide interface opens new corridors to manipulate the correlated features in nanoelectronics devices. Here, we demonstrate that both head-to-head positively charged and tail-to-tail negatively charged BiFeO3/PbTiO3 (BFO/PTO) heterointerfaces were successfully fabricated by designing the BFO/PTO film system deliberately. Aberration-corrected scanning transmission electron microscopic mapping reveals a head-to-head polarization configuration present at the BFO/PTO interface, when the film was deposited directly on a SrTiO3 (001) substrate. The interfacial atomic structure is reconstructed, and the interfacial width is determined to be 5-6 unit cells. The polarization on both sides of the interface is remarkably enhanced. Atomic-scale structural and chemical element analyses exhibit that the reconstructed interface is rich in oxygen, which effectively compensates for the positive bound charges at the head-to-head polarized BFO/PTO interface. In contrast to the head-to-head polarization configuration, the tail-to-tail BFO/PTO interface exhibits a perfect coherency, when SrRuO3 was introduced as a buffer layer on the substrates prior to the film growth. The width of this tail-to-tail interface is estimated to be 3-4 unit cells, and oxygen vacancies are supposed to screen the negative polarization bound charge. The formation mechanism of these distinct interfaces was discussed from the perspective of charge redistribution.
description.department[liu, ying ; zhu, yin-lian ; tang, yun-long ; wang, yu-jia ; li, shuang ; zhang, si-rui ; han, meng-jiao ; ma, jin-yuan ; suriyaprakash, jagadeesh ; ma, xiu-liang] chinese acad sci, shenyang natl lab mat sci, inst met res, wenhua rd 72, shenyang 110016, liaoning, peoples r china ; [liu, ying ; li, shuang ; zhang, si-rui ; han, meng-jiao ; suriyaprakash, jagadeesh] univ chinese acad sci, yuquan rd 19, beijing 100049, peoples r china ; [ma, jin-yuan ; ma, xiu-liang] lanzhou univ technol, sch mat sci & engn, langongping rd 287, lanzhou 730050, gansu, peoples r china
KeywordCharged Interface Perovskite Ferroelectric Controlled Growth Stem
Subject AreaNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
Funding OrganizationNational Natural Science Foundation of China [51231007, 51571197, 51501194, 51671194, 51521091]; National Basic Research Program of China [2014CB921002]; Key Research Program of Frontier Sciences CAS [QYZDJ-SSW-JSC010]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79157
Collection中国科学院金属研究所
Corresponding AuthorZhu, YL (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China.
Recommended Citation
GB/T 7714
Liu, Ying,Zhu, Yin-Lian,Tang, Yun-Long,et al. Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers[J]. AMER CHEMICAL SOC,2017,9(30):25578-25586.
APA Liu, Ying.,Zhu, Yin-Lian.,Tang, Yun-Long.,Wang, Yu-Jia.,Li, Shuang.,...&Zhu, YL .(2017).Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers.AMER CHEMICAL SOC,9(30),25578-25586.
MLA Liu, Ying,et al."Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers".AMER CHEMICAL SOC 9.30(2017):25578-25586.
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