IMR OpenIR
High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states
Li, Zhongwen; Wang, Yujia; Tian, Guo; Li, Peilian; Zhao, Lina; Zhang, Fengyuan; Yao, Junxiang; Fan, Hua; Song, Xiao; Chen, Deyang; Fan, Zhen; Qin, Minghui; Zeng, Min; Zhang, Zhang; Lu, Xubing; Hu, Shejun; Lei, Chihou; Zhu, Qingfeng; Li, Jiangyu; Gao, Xingsen; Liu, Jun-Ming; Gao, XS; Liu, JM (reprint author), South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China.; Liu, JM (reprint author), South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China.; Liu, JM (reprint author), Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 21009, Jiangsu, Peoples R China.; Liu, JM (reprint author), Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 21009, Jiangsu, Peoples R China.
2017-08-01
Source PublicationAMER ASSOC ADVANCEMENT SCIENCE
ISSN2375-2548
Volume3Issue:8Pages:-
AbstractThe exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for these applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high-density arrays of epitaxial BiFeO3 (BFO) ferroelectric nanodots with a lateral size as small as similar to 60nm. Wedemonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time but can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These results demonstrated that these reversibly switchable topological domain arrays are promising for applications in high-density nanoferroelectric devices such as nonvolatile memories.; The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for these applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high-density arrays of epitaxial BiFeO3 (BFO) ferroelectric nanodots with a lateral size as small as similar to 60nm. Wedemonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time but can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These results demonstrated that these reversibly switchable topological domain arrays are promising for applications in high-density nanoferroelectric devices such as nonvolatile memories.
description.department[li, zhongwen ; tian, guo ; li, peilian ; zhao, lina ; zhang, fengyuan ; yao, junxiang ; fan, hua ; song, xiao ; chen, deyang ; fan, zhen ; qin, minghui ; zeng, min ; zhang, zhang ; lu, xubing ; hu, shejun ; gao, xingsen ; liu, jun-ming] south china normal univ, inst adv mat, guangzhou 510006, guangdong, peoples r china ; [li, zhongwen ; tian, guo ; li, peilian ; zhao, lina ; zhang, fengyuan ; yao, junxiang ; fan, hua ; song, xiao ; chen, deyang ; fan, zhen ; qin, minghui ; zeng, min ; zhang, zhang ; lu, xubing ; hu, shejun ; gao, xingsen ; liu, jun-ming] south china normal univ, guangdong prov key lab quantum engn & quantum mat, guangzhou 510006, guangdong, peoples r china ; [wang, yujia] chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, liaoning, peoples r china ; [lei, chihou] st louis univ, dept aerosp & mech engn, st louis, mo 63103 usa ; [zhu, qingfeng ; li, jiangyu] chinese acad sci, shenzhen key lab nanobiomech, shenzhen inst adv technol, shenzhen 518055, guangdong, peoples r china ; [li, jiangyu] univ washington, dept mech engn, seattle, wa 98195 usa ; [liu, jun-ming] nanjing univ, natl lab solid state microstruct, nanjing 21009, jiangsu, peoples r china ; [liu, jun-ming] nanjing univ, collaborat innovat ctr adv microstruct, nanjing 21009, jiangsu, peoples r china
Subject AreaMultidisciplinary Sciences
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79158
Collection中国科学院金属研究所
Corresponding AuthorGao, XS; Liu, JM (reprint author), South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China.; Liu, JM (reprint author), South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China.; Liu, JM (reprint author), Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 21009, Jiangsu, Peoples R China.; Liu, JM (reprint author), Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 21009, Jiangsu, Peoples R China.
Recommended Citation
GB/T 7714
Li, Zhongwen,Wang, Yujia,Tian, Guo,et al. High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states[J]. AMER ASSOC ADVANCEMENT SCIENCE,2017,3(8):-.
APA Li, Zhongwen.,Wang, Yujia.,Tian, Guo.,Li, Peilian.,Zhao, Lina.,...&Liu, JM .(2017).High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states.AMER ASSOC ADVANCEMENT SCIENCE,3(8),-.
MLA Li, Zhongwen,et al."High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states".AMER ASSOC ADVANCEMENT SCIENCE 3.8(2017):-.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li, Zhongwen]'s Articles
[Wang, Yujia]'s Articles
[Tian, Guo]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li, Zhongwen]'s Articles
[Wang, Yujia]'s Articles
[Tian, Guo]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li, Zhongwen]'s Articles
[Wang, Yujia]'s Articles
[Tian, Guo]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.