High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states

IMR OpenIR

	High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states
	Li, Zhongwen; Wang, Yujia; Tian, Guo; Li, Peilian; Zhao, Lina; Zhang, Fengyuan; Yao, Junxiang; Fan, Hua; Song, Xiao; Chen, Deyang; Fan, Zhen; Qin, Minghui; Zeng, Min; Zhang, Zhang; Lu, Xubing; Hu, Shejun; Lei, Chihou; Zhu, Qingfeng; Li, Jiangyu; Gao, Xingsen; Liu, Jun-Ming; Gao, XS; Liu, JM (reprint author), South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China.; Liu, JM (reprint author), South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China.; Liu, JM (reprint author), Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 21009, Jiangsu, Peoples R China.; Liu, JM (reprint author), Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 21009, Jiangsu, Peoples R China.
	2017-08-01
发表期刊	AMER ASSOC ADVANCEMENT SCIENCE
ISSN	2375-2548
卷号	3 期号:8 页码:-
摘要	The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for these applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high-density arrays of epitaxial BiFeO3 (BFO) ferroelectric nanodots with a lateral size as small as similar to 60nm. Wedemonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time but can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These results demonstrated that these reversibly switchable topological domain arrays are promising for applications in high-density nanoferroelectric devices such as nonvolatile memories.; The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for these applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high-density arrays of epitaxial BiFeO3 (BFO) ferroelectric nanodots with a lateral size as small as similar to 60nm. Wedemonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time but can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These results demonstrated that these reversibly switchable topological domain arrays are promising for applications in high-density nanoferroelectric devices such as nonvolatile memories.
部门归属	[li, zhongwen ; tian, guo ; li, peilian ; zhao, lina ; zhang, fengyuan ; yao, junxiang ; fan, hua ; song, xiao ; chen, deyang ; fan, zhen ; qin, minghui ; zeng, min ; zhang, zhang ; lu, xubing ; hu, shejun ; gao, xingsen ; liu, jun-ming] south china normal univ, inst adv mat, guangzhou 510006, guangdong, peoples r china ; [li, zhongwen ; tian, guo ; li, peilian ; zhao, lina ; zhang, fengyuan ; yao, junxiang ; fan, hua ; song, xiao ; chen, deyang ; fan, zhen ; qin, minghui ; zeng, min ; zhang, zhang ; lu, xubing ; hu, shejun ; gao, xingsen ; liu, jun-ming] south china normal univ, guangdong prov key lab quantum engn & quantum mat, guangzhou 510006, guangdong, peoples r china ; [wang, yujia] chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, liaoning, peoples r china ; [lei, chihou] st louis univ, dept aerosp & mech engn, st louis, mo 63103 usa ; [zhu, qingfeng ; li, jiangyu] chinese acad sci, shenzhen key lab nanobiomech, shenzhen inst adv technol, shenzhen 518055, guangdong, peoples r china ; [li, jiangyu] univ washington, dept mech engn, seattle, wa 98195 usa ; [liu, jun-ming] nanjing univ, natl lab solid state microstruct, nanjing 21009, jiangsu, peoples r china ; [liu, jun-ming] nanjing univ, collaborat innovat ctr adv microstruct, nanjing 21009, jiangsu, peoples r china
学科领域	Multidisciplinary Sciences
收录类别	SCI
语种	英语
WOS记录号	WOS:000411589900038
引用统计	被引频次：125[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/79158
专题	中国科学院金属研究所
通讯作者	Gao, XS; Liu, JM (reprint author), South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China.; Liu, JM (reprint author), South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China.; Liu, JM (reprint author), Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 21009, Jiangsu, Peoples R China.; Liu, JM (reprint author), Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 21009, Jiangsu, Peoples R China.
推荐引用方式 GB/T 7714	Li, Zhongwen,Wang, Yujia,Tian, Guo,et al. High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states[J]. AMER ASSOC ADVANCEMENT SCIENCE,2017,3(8):-.
APA	Li, Zhongwen.,Wang, Yujia.,Tian, Guo.,Li, Peilian.,Zhao, Lina.,...&Liu, JM .(2017).High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states.AMER ASSOC ADVANCEMENT SCIENCE,3(8),-.
MLA	Li, Zhongwen,et al."High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states".AMER ASSOC ADVANCEMENT SCIENCE 3.8(2017):-.