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| Nanoindentation-induced phase transformation between SiC polymorphs | |
| Yao, TT; Yin, DQ; Saito, M; Wu, B; Chen, CL; Ma, XL; Chen, CL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China. | |
| 2018-06-01 | |
| Source Publication | MATERIALS LETTERS
 |
| ISSN | 0167-577X |
| Volume | 220Pages:152-155 |
| Abstract | Nanoindentation-induced phase transformation between silicon carbide (SiC) polymorphs has been investigated by a combined study of transmission electron microscopy and first principles calculations. In situ nanoindentation of 4H-SiC single crystals revealed the occurrence of a phase transformation from 4H to 3C in the vicinity of a crack. First principles calculations pointed out an extremely low energy barrier for this phase transformation, which could be attributed to the very smooth transition in the atomic and electronic structures across the 3C/4H interface. The phase transformation from 4H to 3C may retard the propagation of cracks and reduce the band gap of SiC. (C) 2018 Elsevier B.V. All rights reserved.; Nanoindentation-induced phase transformation between silicon carbide (SiC) polymorphs has been investigated by a combined study of transmission electron microscopy and first principles calculations. In situ nanoindentation of 4H-SiC single crystals revealed the occurrence of a phase transformation from 4H to 3C in the vicinity of a crack. First principles calculations pointed out an extremely low energy barrier for this phase transformation, which could be attributed to the very smooth transition in the atomic and electronic structures across the 3C/4H interface. The phase transformation from 4H to 3C may retard the propagation of cracks and reduce the band gap of SiC. (C) 2018 Elsevier B.V. All rights reserved. |
| description.department | [yao, tingting ; wu, bo ; chen, chunlin ; ma, xiuliang] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china ; [yin, deqiang] chongqing univ, coll aerosp engn, chongqing 400044, peoples r china ; [saito, mitsuhiro] tohoku univ, adv inst mat res, sendai, miyagi 9808577, japan ; [saito, mitsuhiro] univ tokyo, inst engn innovat, tokyo 1160013, japan |
| Keyword | Silicon-carbide Polytypes Molecules 4h |
| Subject Area | Materials Science, Multidisciplinary ; Physics, Applied |
| Funding Organization | Key Research Program of Frontier Sciences, CAS [QYZDY-SSW-JSC027]; "Thousand Youth Talents Plan" of China; National Natural Science Foundation of China [51771200, 11332013] |
| Indexed By | SCI |
| Language | 英语 |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/79296 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Chen, CL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China. |
| Recommended Citation GB/T 7714 | Yao, TT,Yin, DQ,Saito, M,et al. Nanoindentation-induced phase transformation between SiC polymorphs[J]. MATERIALS LETTERS,2018,220:152-155. |
| APA | Yao, TT.,Yin, DQ.,Saito, M.,Wu, B.,Chen, CL.,...&Chen, CL .(2018).Nanoindentation-induced phase transformation between SiC polymorphs.MATERIALS LETTERS,220,152-155. |
| MLA | Yao, TT,et al."Nanoindentation-induced phase transformation between SiC polymorphs".MATERIALS LETTERS 220(2018):152-155. |
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