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Nanoindentation-induced phase transformation between SiC polymorphs
Yao, TT; Yin, DQ; Saito, M; Wu, B; Chen, CL; Ma, XL; Chen, CL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
2018-06-01
Source PublicationMATERIALS LETTERS
ISSN0167-577X
Volume220Pages:152-155
AbstractNanoindentation-induced phase transformation between silicon carbide (SiC) polymorphs has been investigated by a combined study of transmission electron microscopy and first principles calculations. In situ nanoindentation of 4H-SiC single crystals revealed the occurrence of a phase transformation from 4H to 3C in the vicinity of a crack. First principles calculations pointed out an extremely low energy barrier for this phase transformation, which could be attributed to the very smooth transition in the atomic and electronic structures across the 3C/4H interface. The phase transformation from 4H to 3C may retard the propagation of cracks and reduce the band gap of SiC. (C) 2018 Elsevier B.V. All rights reserved.; Nanoindentation-induced phase transformation between silicon carbide (SiC) polymorphs has been investigated by a combined study of transmission electron microscopy and first principles calculations. In situ nanoindentation of 4H-SiC single crystals revealed the occurrence of a phase transformation from 4H to 3C in the vicinity of a crack. First principles calculations pointed out an extremely low energy barrier for this phase transformation, which could be attributed to the very smooth transition in the atomic and electronic structures across the 3C/4H interface. The phase transformation from 4H to 3C may retard the propagation of cracks and reduce the band gap of SiC. (C) 2018 Elsevier B.V. All rights reserved.
description.department[yao, tingting ; wu, bo ; chen, chunlin ; ma, xiuliang] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china ; [yin, deqiang] chongqing univ, coll aerosp engn, chongqing 400044, peoples r china ; [saito, mitsuhiro] tohoku univ, adv inst mat res, sendai, miyagi 9808577, japan ; [saito, mitsuhiro] univ tokyo, inst engn innovat, tokyo 1160013, japan
KeywordSilicon-carbide Polytypes Molecules 4h
Subject AreaMaterials Science, Multidisciplinary ; Physics, Applied
Funding OrganizationKey Research Program of Frontier Sciences, CAS [QYZDY-SSW-JSC027]; "Thousand Youth Talents Plan" of China; National Natural Science Foundation of China [51771200, 11332013]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79296
Collection中国科学院金属研究所
Corresponding AuthorChen, CL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
Recommended Citation
GB/T 7714
Yao, TT,Yin, DQ,Saito, M,et al. Nanoindentation-induced phase transformation between SiC polymorphs[J]. MATERIALS LETTERS,2018,220:152-155.
APA Yao, TT.,Yin, DQ.,Saito, M.,Wu, B.,Chen, CL.,...&Chen, CL .(2018).Nanoindentation-induced phase transformation between SiC polymorphs.MATERIALS LETTERS,220,152-155.
MLA Yao, TT,et al."Nanoindentation-induced phase transformation between SiC polymorphs".MATERIALS LETTERS 220(2018):152-155.
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