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Nanoindentation-induced phase transformation between SiC polymorphs
Yao, TT; Yin, DQ; Saito, M; Wu, B; Chen, CL; Ma, XL; Chen, CL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
2018-06-01
发表期刊MATERIALS LETTERS
ISSN0167-577X
卷号220页码:152-155
摘要Nanoindentation-induced phase transformation between silicon carbide (SiC) polymorphs has been investigated by a combined study of transmission electron microscopy and first principles calculations. In situ nanoindentation of 4H-SiC single crystals revealed the occurrence of a phase transformation from 4H to 3C in the vicinity of a crack. First principles calculations pointed out an extremely low energy barrier for this phase transformation, which could be attributed to the very smooth transition in the atomic and electronic structures across the 3C/4H interface. The phase transformation from 4H to 3C may retard the propagation of cracks and reduce the band gap of SiC. (C) 2018 Elsevier B.V. All rights reserved.; Nanoindentation-induced phase transformation between silicon carbide (SiC) polymorphs has been investigated by a combined study of transmission electron microscopy and first principles calculations. In situ nanoindentation of 4H-SiC single crystals revealed the occurrence of a phase transformation from 4H to 3C in the vicinity of a crack. First principles calculations pointed out an extremely low energy barrier for this phase transformation, which could be attributed to the very smooth transition in the atomic and electronic structures across the 3C/4H interface. The phase transformation from 4H to 3C may retard the propagation of cracks and reduce the band gap of SiC. (C) 2018 Elsevier B.V. All rights reserved.
部门归属[yao, tingting ; wu, bo ; chen, chunlin ; ma, xiuliang] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china ; [yin, deqiang] chongqing univ, coll aerosp engn, chongqing 400044, peoples r china ; [saito, mitsuhiro] tohoku univ, adv inst mat res, sendai, miyagi 9808577, japan ; [saito, mitsuhiro] univ tokyo, inst engn innovat, tokyo 1160013, japan
关键词Silicon-carbide Polytypes Molecules 4h
学科领域Materials Science, Multidisciplinary ; Physics, Applied
资助者Key Research Program of Frontier Sciences, CAS [QYZDY-SSW-JSC027]; "Thousand Youth Talents Plan" of China; National Natural Science Foundation of China [51771200, 11332013]
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/79296
专题中国科学院金属研究所
通讯作者Chen, CL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
推荐引用方式
GB/T 7714
Yao, TT,Yin, DQ,Saito, M,et al. Nanoindentation-induced phase transformation between SiC polymorphs[J]. MATERIALS LETTERS,2018,220:152-155.
APA Yao, TT.,Yin, DQ.,Saito, M.,Wu, B.,Chen, CL.,...&Chen, CL .(2018).Nanoindentation-induced phase transformation between SiC polymorphs.MATERIALS LETTERS,220,152-155.
MLA Yao, TT,et al."Nanoindentation-induced phase transformation between SiC polymorphs".MATERIALS LETTERS 220(2018):152-155.
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