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Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures
Bai, Y; Wang, ZJ; Cui, JZ; Zhang, ZD; Wang, ZJ (reprint author), Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Liaoning, Peoples R China.
2018-05-23
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume51Issue:20Pages:-
AbstractImproving the tunability of depletion layer width (DLW) in ferroelectric/semiconductor heterostructures is important for the performance of some devices. In this work, 200-nm-thick Pb(Zr0.4Ti0.6)O-3 (PZT) films were deposited on different Nb-doped SrTiO3 (NSTO) substrates, and the tunability of DLW at PZT/NSTO interfaces were studied. Our results showed that the maximum tunability of the DLW was achieved at the NSTO substrate with 0.5 wt% Nb. On the basis of the modified capacitance model and the ferroelectric semiconductor theory, we suggest that the tunability of the DLW in PZT/NSTO heterostructures can be attributed to a delicate balance of the depletion layer charge and the ferroelectric polarization charge. Therefore, the performance of some devices related to the tunability of DLW in ferroelectric/ semiconductor heterostructures can be improved by modulating the doping concentration in semiconducting electrode materials.; Improving the tunability of depletion layer width (DLW) in ferroelectric/semiconductor heterostructures is important for the performance of some devices. In this work, 200-nm-thick Pb(Zr0.4Ti0.6)O-3 (PZT) films were deposited on different Nb-doped SrTiO3 (NSTO) substrates, and the tunability of DLW at PZT/NSTO interfaces were studied. Our results showed that the maximum tunability of the DLW was achieved at the NSTO substrate with 0.5 wt% Nb. On the basis of the modified capacitance model and the ferroelectric semiconductor theory, we suggest that the tunability of the DLW in PZT/NSTO heterostructures can be attributed to a delicate balance of the depletion layer charge and the ferroelectric polarization charge. Therefore, the performance of some devices related to the tunability of DLW in ferroelectric/ semiconductor heterostructures can be improved by modulating the doping concentration in semiconducting electrode materials.
description.department[bai, yu ; wang, zhan jie ; cui, jian zhong] northeastern univ, sch mat sci & engn, shenyang 110819, liaoning, peoples r china ; [bai, yu ; wang, zhan jie ; zhang, zhi dong] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, liaoning, peoples r china ; [wang, zhan jie] shenyang univ technol, sch mat sci & engn, shenyang 110870, liaoning, peoples r china
KeywordMetal/ferroelectric/semiconductor Tunnel-junctions Ferroelectric Thin-films Electroresistance Field
Subject AreaPhysics, Applied
Funding OrganizationChinese Academy of Sciences; National Natural Science Foundation of China [51172238]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79302
Collection中国科学院金属研究所
Corresponding AuthorWang, ZJ (reprint author), Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Liaoning, Peoples R China.
Recommended Citation
GB/T 7714
Bai, Y,Wang, ZJ,Cui, JZ,et al. Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(20):-.
APA Bai, Y.,Wang, ZJ.,Cui, JZ.,Zhang, ZD.,Wang, ZJ .,...&Wang, ZJ .(2018).Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures.JOURNAL OF PHYSICS D-APPLIED PHYSICS,51(20),-.
MLA Bai, Y,et al."Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures".JOURNAL OF PHYSICS D-APPLIED PHYSICS 51.20(2018):-.
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