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Composition and Band Gap Tailoring of Crystalline (GaN)(1-x),(ZnO)(x) Solid Solution Nanowires for Enhanced Photoelectrochemical Performance
Li, J; Liu, BD; Wu, AM; Yang, B; Yang, WJ; Liu, F; Zhang, XL; An, V; Jiang, X; Wu, AM (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China.; Jiang, X (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci SYNL, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.
2018-05-07
Source PublicationINORGANIC CHEMISTRY
ISSN0020-1669
Volume57Issue:9Pages:5240-5248
AbstractPhotoelectrochemical water splitting has emerged as an effective artificial photosynthesis technology to generate clean energy of H-2 from sunlight. The core issue in this reaction system is to develop a highly efficient photoanode with a large fraction of solar light absorption and greater active surface area. In this work, we take advantage of energy band engineering to synthesize (GaN)(1-x)(ZnO)(x) solid solution nanowires with ZnO contents ranging from 10.3% to 47.6% and corresponding band gap tailoring from 3.08 to 2.77 eV on the basis of the Au-assisted VLS mechanism. The morphology of nanowires directly grown on the conductive substrate facilitates the charge transfer and simultaneously improves the surface reaction sites. As a result, a photocurrent approximately 10 times larger than that for a conventional powder-based photoanode is obtained, which indicates the potential of (GaN)(1-x)(ZnO)(x) nanowires in the preparation of superior photoanodes for enhanced water splitting. It is anticipated that the water-splitting capability of (GaN)(1-x)(ZnO)(x) nanowire can be further increased through alignment control for enhanced visible light absorption and reduction of charge transfer resistance.; Photoelectrochemical water splitting has emerged as an effective artificial photosynthesis technology to generate clean energy of H-2 from sunlight. The core issue in this reaction system is to develop a highly efficient photoanode with a large fraction of solar light absorption and greater active surface area. In this work, we take advantage of energy band engineering to synthesize (GaN)(1-x)(ZnO)(x) solid solution nanowires with ZnO contents ranging from 10.3% to 47.6% and corresponding band gap tailoring from 3.08 to 2.77 eV on the basis of the Au-assisted VLS mechanism. The morphology of nanowires directly grown on the conductive substrate facilitates the charge transfer and simultaneously improves the surface reaction sites. As a result, a photocurrent approximately 10 times larger than that for a conventional powder-based photoanode is obtained, which indicates the potential of (GaN)(1-x)(ZnO)(x) nanowires in the preparation of superior photoanodes for enhanced water splitting. It is anticipated that the water-splitting capability of (GaN)(1-x)(ZnO)(x) nanowire can be further increased through alignment control for enhanced visible light absorption and reduction of charge transfer resistance.
description.department[li, jing ; wu, aimin] dalian univ technol, key lab mat modificat laser ion & electron beams, minist educ, dalian 116024, peoples r china ; [li, jing ; liu, baodan ; yang, bing ; yang, wenjin ; zhang, xinglai ; jiang, xin] chinese acad sci, inst met res, shenyang natl lab mat sci synl, 72 wenhua rd, shenyang 110016, liaoning, peoples r china ; [liu, fei] sun yat sen univ, state key lab optoelect mat & technol, guangzhou 510275, guangdong, peoples r china ; [liu, fei] sun yat sen univ, sch elect & informat technol, guangzhou 510275, guangdong, peoples r china ; [an, vladimir] natl res tomsk polytech univ, sch adv mfg technol, 30 lenin ave, tomsk 634050, russia
KeywordVisible-light-driven Photocatalytic Activity (Ga1-xznx)(N1-xox) Nanocrystals Semiconductor Nanowires Energy-conversion Water Electrode Heterostructures Absorption Efficiency
Subject AreaChemistry, Inorganic & Nuclear
Funding OrganizationNational Natural Science Foundation of China [51702326]; Basic Science Innovation Program of Shenyang National Laboratory for Materials Science [2017EP05, 2017RP25]; Tomsk Polytechnic University Competitiveness Enhancement Program grant
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79312
Collection中国科学院金属研究所
Corresponding AuthorLiu, BD; Wu, AM (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China.; Jiang, X (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci SYNL, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.
Recommended Citation
GB/T 7714
Li, J,Liu, BD,Wu, AM,et al. Composition and Band Gap Tailoring of Crystalline (GaN)(1-x),(ZnO)(x) Solid Solution Nanowires for Enhanced Photoelectrochemical Performance[J]. INORGANIC CHEMISTRY,2018,57(9):5240-5248.
APA Li, J.,Liu, BD.,Wu, AM.,Yang, B.,Yang, WJ.,...&Jiang, X .(2018).Composition and Band Gap Tailoring of Crystalline (GaN)(1-x),(ZnO)(x) Solid Solution Nanowires for Enhanced Photoelectrochemical Performance.INORGANIC CHEMISTRY,57(9),5240-5248.
MLA Li, J,et al."Composition and Band Gap Tailoring of Crystalline (GaN)(1-x),(ZnO)(x) Solid Solution Nanowires for Enhanced Photoelectrochemical Performance".INORGANIC CHEMISTRY 57.9(2018):5240-5248.
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