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Ultrahigh-performance transparent conductive films of carbon-welded isolated single-wall carbon nanotubes
Jiang, S; Hou, PX; Chen, ML; Wang, BW; Sun, DM; Tang, DM; Jin, Q; Guo, QX; Zhang, DD; Du, JH; Tai, KP; Tan, J; Kauppinen, EI; Liu, C; Cheng, HM; Cheng, HM (reprint author), Chinese Acad Sci, Shenyang Nat Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Cheng, HM (reprint author), ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China.; Cheng, HM (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China.; Cheng, HM (reprint author), Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China.
2018-05-01
Source PublicationSCIENCE ADVANCES
ISSN2375-2548
Volume4Issue:5Pages:-
AbstractSingle-wall carbon nanotubes (SWCNTs) are ideal for fabricating transparent conductive films because of their small diameter, good optical and electrical properties, and excellent flexibility. However, a high intertube Schottky junction resistance, together with the existence of aggregated bundles of SWCNTs, leads to a degraded optoelectronic performance of the films. We report a network of isolated SWCNTs prepared by an injection floating catalyst chemical vapor deposition method, in which crossed SWCNTs are welded together by graphitic carbon. Pristine SWCNT films show a record low sheet resistance of 41 ohm rectangle(-1) at 90% transmittance for 550-nm light. After HNO3 treatment, the sheet resistance further decreases to 25 ohm rectangle(-1). Organic light-emitting diodes using this SWCNT film as anodes demonstrate a low turn-on voltage of 2.5 V, a high current efficiency of 75 cd A(-1), and excellent flexibility. Investigation of isolated SWCNT-based field-effect transistors shows that the carbon-welded joints convert the Schottky contacts between metallic and semiconducting SWCNTs into near-ohmic ones, which significantly improves the conductivity of the transparent SWCNT network. Our work provides a new avenue of assembling individual SWCNTs into macroscopic thin films, which demonstrate great potential for use as transparent electrodes in various flexible electronics.; Single-wall carbon nanotubes (SWCNTs) are ideal for fabricating transparent conductive films because of their small diameter, good optical and electrical properties, and excellent flexibility. However, a high intertube Schottky junction resistance, together with the existence of aggregated bundles of SWCNTs, leads to a degraded optoelectronic performance of the films. We report a network of isolated SWCNTs prepared by an injection floating catalyst chemical vapor deposition method, in which crossed SWCNTs are welded together by graphitic carbon. Pristine SWCNT films show a record low sheet resistance of 41 ohm rectangle(-1) at 90% transmittance for 550-nm light. After HNO3 treatment, the sheet resistance further decreases to 25 ohm rectangle(-1). Organic light-emitting diodes using this SWCNT film as anodes demonstrate a low turn-on voltage of 2.5 V, a high current efficiency of 75 cd A(-1), and excellent flexibility. Investigation of isolated SWCNT-based field-effect transistors shows that the carbon-welded joints convert the Schottky contacts between metallic and semiconducting SWCNTs into near-ohmic ones, which significantly improves the conductivity of the transparent SWCNT network. Our work provides a new avenue of assembling individual SWCNTs into macroscopic thin films, which demonstrate great potential for use as transparent electrodes in various flexible electronics.
description.department[jiang, song ; hou, peng-xiang ; chen, mao-lin ; wang, bing-wei ; sun, dong-ming ; tang, dai-ming ; jin, qun ; zhang, ding-dong ; du, jin-hong ; tai, kai-ping ; tan, jun ; liu, chang ; cheng, hui-ming] chinese acad sci, shenyang nat lab mat sci, inst met res, shenyang 110016, liaoning, peoples r china ; [jiang, song ; cheng, hui-ming] shanghaitech univ, sch phys sci & technol, shanghai 200031, peoples r china ; [jiang, song] chinese acad sci, shanghai inst microsyst & informat technol, state key lab funct mat informat, shanghai 200050, peoples r china ; [jiang, song ; wang, bing-wei ; jin, qun] univ chinese acad sci, beijing 100049, peoples r china ; [hou, peng-xiang ; chen, mao-lin ; sun, dong-ming ; tang, dai-ming ; zhang, ding-dong ; du, jin-hong ; tai, kai-ping ; tan, jun ; liu, chang ; cheng, hui-ming] univ sci & technol china, sch mat sci & engn, shenyang 110016, liaoning, peoples r china ; [guo, qing-xun] chinese acad sci, changchun inst appl chem, state key lab polymers phys & chem, changchun 130022, jilin, peoples r china ; [kauppinen, esko i.] aalto univ, dept appl phys, sch sci, pob 15100, fi-00076 espoo, finland ; [cheng, hui-ming] tsinghua univ, tsinghua berkeley shenzhen inst, shenzhen 518055, peoples r china
KeywordLight-emitting-diodes Optoelectronic Devices Thin-films Electrodes Networks Phase
Subject AreaMultidisciplinary Sciences
Funding OrganizationMinistry of Science and Technology of China [2016YFA0200101]; National Natural Science Foundation of China [51625203, 51532008, 51521091, 51772303, 51572264, 51390473, 51371178, 51372254]; Chinese Academy of Sciences [KGZD-EW-T06]; CAS/SAFEA (Chinese Academy of Sciences/State Administration of Foreign Experts Affairs) International Partnership Program for Creative Research Teams; Molecular and Thin Film Engineering for Building Integrated Photonics and Process Industry project of the Aalto University Aalto Energy Efficiency Research Programme; Liaoning BaiQianWan Talents Program
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79315
Collection中国科学院金属研究所
Corresponding AuthorLiu, C; Cheng, HM (reprint author), Chinese Acad Sci, Shenyang Nat Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Cheng, HM (reprint author), ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China.; Cheng, HM (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China.; Cheng, HM (reprint author), Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China.
Recommended Citation
GB/T 7714
Jiang, S,Hou, PX,Chen, ML,et al. Ultrahigh-performance transparent conductive films of carbon-welded isolated single-wall carbon nanotubes[J]. SCIENCE ADVANCES,2018,4(5):-.
APA Jiang, S.,Hou, PX.,Chen, ML.,Wang, BW.,Sun, DM.,...&Cheng, HM .(2018).Ultrahigh-performance transparent conductive films of carbon-welded isolated single-wall carbon nanotubes.SCIENCE ADVANCES,4(5),-.
MLA Jiang, S,et al."Ultrahigh-performance transparent conductive films of carbon-welded isolated single-wall carbon nanotubes".SCIENCE ADVANCES 4.5(2018):-.
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