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Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current
Zhao, XT; Zhao, YQ; Liu, W; Dai, ZM; Wang, TT; Zhao, XG; Zhang, ZD; Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
2018-05-01
Source PublicationJOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN1005-0302
Volume34Issue:5Pages:832-835
AbstractBy inserting an ultrathin Pt layer at Co/Ru interface, we established antiferromagnetic coupling with out-of-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering. To achieve configuration suitable for free layer, the magnetic properties of the stacks have been investigated by changing the thickness of Co, Ru and Pt layers using an orthogonal wedges technique. It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness. Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop. The switching magnetization of synthetic antiferromagnetic (SAF) structure is achieved by DC current under an in-plane static magnetic field of +/- 500 Oe. This structure is very promising for free layer in spintronic application. (C) 2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.; By inserting an ultrathin Pt layer at Co/Ru interface, we established antiferromagnetic coupling with out-of-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering. To achieve configuration suitable for free layer, the magnetic properties of the stacks have been investigated by changing the thickness of Co, Ru and Pt layers using an orthogonal wedges technique. It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness. Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop. The switching magnetization of synthetic antiferromagnetic (SAF) structure is achieved by DC current under an in-plane static magnetic field of +/- 500 Oe. This structure is very promising for free layer in spintronic application. (C) 2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
description.department[zhao, x. t. ; zhao, y. q. ; liu, w. ; dai, z. m. ; wang, t. t. ; zhao, x. g. ; zhang, z. d.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china
KeywordTunnel-junctions Domain-structure Thin-films Torque Layer Co/ru
Subject AreaMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
Funding OrganizationNational Natural Science Foundation of China [51590883, 51331006, 51471167]; Chinese Academy of Sciences [KJZD-EW-M05-3]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79334
Collection中国科学院金属研究所
Corresponding AuthorLiu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
Recommended Citation
GB/T 7714
Zhao, XT,Zhao, YQ,Liu, W,et al. Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2018,34(5):832-835.
APA Zhao, XT.,Zhao, YQ.,Liu, W.,Dai, ZM.,Wang, TT.,...&Liu, W .(2018).Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,34(5),832-835.
MLA Zhao, XT,et al."Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 34.5(2018):832-835.
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