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Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current
Zhao, XT; Zhao, YQ; Liu, W; Dai, ZM; Wang, TT; Zhao, XG; Zhang, ZD; Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
2018-05-01
发表期刊JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN1005-0302
卷号34期号:5页码:832-835
摘要By inserting an ultrathin Pt layer at Co/Ru interface, we established antiferromagnetic coupling with out-of-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering. To achieve configuration suitable for free layer, the magnetic properties of the stacks have been investigated by changing the thickness of Co, Ru and Pt layers using an orthogonal wedges technique. It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness. Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop. The switching magnetization of synthetic antiferromagnetic (SAF) structure is achieved by DC current under an in-plane static magnetic field of +/- 500 Oe. This structure is very promising for free layer in spintronic application. (C) 2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.; By inserting an ultrathin Pt layer at Co/Ru interface, we established antiferromagnetic coupling with out-of-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering. To achieve configuration suitable for free layer, the magnetic properties of the stacks have been investigated by changing the thickness of Co, Ru and Pt layers using an orthogonal wedges technique. It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness. Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop. The switching magnetization of synthetic antiferromagnetic (SAF) structure is achieved by DC current under an in-plane static magnetic field of +/- 500 Oe. This structure is very promising for free layer in spintronic application. (C) 2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
部门归属[zhao, x. t. ; zhao, y. q. ; liu, w. ; dai, z. m. ; wang, t. t. ; zhao, x. g. ; zhang, z. d.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china
关键词Tunnel-junctions Domain-structure Thin-films Torque Layer Co/ru
学科领域Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
资助者National Natural Science Foundation of China [51590883, 51331006, 51471167]; Chinese Academy of Sciences [KJZD-EW-M05-3]
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/79334
专题中国科学院金属研究所
通讯作者Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
推荐引用方式
GB/T 7714
Zhao, XT,Zhao, YQ,Liu, W,et al. Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2018,34(5):832-835.
APA Zhao, XT.,Zhao, YQ.,Liu, W.,Dai, ZM.,Wang, TT.,...&Liu, W .(2018).Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,34(5),832-835.
MLA Zhao, XT,et al."Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 34.5(2018):832-835.
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