IMR OpenIR
Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers
Zhao, XT; Liu, W; Li, SK; Wang, TT; Liu, L; Song, YH; Ma, S; Zhao, XG; Zhang, ZD; Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
2018-04-28
Source PublicationNANOSCALE
ISSN2040-3364
Volume10Issue:16Pages:7612-7618
AbstractA perpendicularly magnetized synthetic antiferromagnetic structure is a promising alternative to a single ferromagnetic layer in spintronic applications because of its low net magnetization and high thermal stability. In this work, the ferromagnetic layers in the synthetic antiferromagnetic structure are simplified to 'soft' Co70Fe30 layers with the aid of ultrathin Pt insert layers between the ferromagnetic layers and the exchange coupling Ru layer to lower the energy consumption. In the current-driven manipulation of the magnetization, asymmetric switching loops are observed, which originate from the edge domain walls induced by the growth of the electrode pads. The edge domain walls preserved beneath the electrode pad help the switching process skipping the nucleation stage, lowering the critical current density to the order of 10(6) A cm(-2). The present work broadens the choice of ferromagnetic layers for building an SAF structure and highlights a new way to utilize the synthetic antiferromagnetic structure as a building block in low-energy-consuming spintronic devices.; A perpendicularly magnetized synthetic antiferromagnetic structure is a promising alternative to a single ferromagnetic layer in spintronic applications because of its low net magnetization and high thermal stability. In this work, the ferromagnetic layers in the synthetic antiferromagnetic structure are simplified to 'soft' Co70Fe30 layers with the aid of ultrathin Pt insert layers between the ferromagnetic layers and the exchange coupling Ru layer to lower the energy consumption. In the current-driven manipulation of the magnetization, asymmetric switching loops are observed, which originate from the edge domain walls induced by the growth of the electrode pads. The edge domain walls preserved beneath the electrode pad help the switching process skipping the nucleation stage, lowering the critical current density to the order of 10(6) A cm(-2). The present work broadens the choice of ferromagnetic layers for building an SAF structure and highlights a new way to utilize the synthetic antiferromagnetic structure as a building block in low-energy-consuming spintronic devices.
description.department[zhao, xiaotian ; liu, wei ; li, shangkun ; wang, tingting ; liu, long ; song, yuhang ; ma, song ; zhao, xinguo ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china
KeywordSpin-orbit Torque Magnetic Tunnel-junctions Perpendicular Magnetization Anisotropy
Subject AreaChemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
Funding OrganizationChinese Academy of Sciences [KJZD-EW-M05-3]; State Key Project of Research and Development of China [2017YFA0206302]; National Nature Science Foundation of China [51771198, 51590883, 51331006]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79351
Collection中国科学院金属研究所
Corresponding AuthorLiu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
Recommended Citation
GB/T 7714
Zhao, XT,Liu, W,Li, SK,et al. Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers[J]. NANOSCALE,2018,10(16):7612-7618.
APA Zhao, XT.,Liu, W.,Li, SK.,Wang, TT.,Liu, L.,...&Liu, W .(2018).Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers.NANOSCALE,10(16),7612-7618.
MLA Zhao, XT,et al."Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers".NANOSCALE 10.16(2018):7612-7618.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhao, XT]'s Articles
[Liu, W]'s Articles
[Li, SK]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhao, XT]'s Articles
[Liu, W]'s Articles
[Li, SK]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhao, XT]'s Articles
[Liu, W]'s Articles
[Li, SK]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.