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Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers
Zhao, XT; Liu, W; Li, SK; Wang, TT; Liu, L; Song, YH; Ma, S; Zhao, XG; Zhang, ZD; Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
2018-04-28
发表期刊NANOSCALE
ISSN2040-3364
卷号10期号:16页码:7612-7618
摘要A perpendicularly magnetized synthetic antiferromagnetic structure is a promising alternative to a single ferromagnetic layer in spintronic applications because of its low net magnetization and high thermal stability. In this work, the ferromagnetic layers in the synthetic antiferromagnetic structure are simplified to 'soft' Co70Fe30 layers with the aid of ultrathin Pt insert layers between the ferromagnetic layers and the exchange coupling Ru layer to lower the energy consumption. In the current-driven manipulation of the magnetization, asymmetric switching loops are observed, which originate from the edge domain walls induced by the growth of the electrode pads. The edge domain walls preserved beneath the electrode pad help the switching process skipping the nucleation stage, lowering the critical current density to the order of 10(6) A cm(-2). The present work broadens the choice of ferromagnetic layers for building an SAF structure and highlights a new way to utilize the synthetic antiferromagnetic structure as a building block in low-energy-consuming spintronic devices.; A perpendicularly magnetized synthetic antiferromagnetic structure is a promising alternative to a single ferromagnetic layer in spintronic applications because of its low net magnetization and high thermal stability. In this work, the ferromagnetic layers in the synthetic antiferromagnetic structure are simplified to 'soft' Co70Fe30 layers with the aid of ultrathin Pt insert layers between the ferromagnetic layers and the exchange coupling Ru layer to lower the energy consumption. In the current-driven manipulation of the magnetization, asymmetric switching loops are observed, which originate from the edge domain walls induced by the growth of the electrode pads. The edge domain walls preserved beneath the electrode pad help the switching process skipping the nucleation stage, lowering the critical current density to the order of 10(6) A cm(-2). The present work broadens the choice of ferromagnetic layers for building an SAF structure and highlights a new way to utilize the synthetic antiferromagnetic structure as a building block in low-energy-consuming spintronic devices.
部门归属[zhao, xiaotian ; liu, wei ; li, shangkun ; wang, tingting ; liu, long ; song, yuhang ; ma, song ; zhao, xinguo ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china
关键词Spin-orbit Torque Magnetic Tunnel-junctions Perpendicular Magnetization Anisotropy
学科领域Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
资助者Chinese Academy of Sciences [KJZD-EW-M05-3]; State Key Project of Research and Development of China [2017YFA0206302]; National Nature Science Foundation of China [51771198, 51590883, 51331006]
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/79351
专题中国科学院金属研究所
通讯作者Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
推荐引用方式
GB/T 7714
Zhao, XT,Liu, W,Li, SK,et al. Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers[J]. NANOSCALE,2018,10(16):7612-7618.
APA Zhao, XT.,Liu, W.,Li, SK.,Wang, TT.,Liu, L.,...&Liu, W .(2018).Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers.NANOSCALE,10(16),7612-7618.
MLA Zhao, XT,et al."Asymmetric current-driven switching of synthetic antiferromagnets with Pt insert layers".NANOSCALE 10.16(2018):7612-7618.
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