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Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3
Cui, CJ; Hu, WJ; Yan, XG; Addiego, C; Gao, WP; Wang, Y; Wang, Z; Li, LZ; Cheng, YC; Li, P; Zhang, XX; Alshareef, HN; Wu, T; Zhu, WG; Pan, XQ; Li, LJ; Li, LJ (reprint author), King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Jeddah 239556900, Saudi Arabia.; Hu, WJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Pan, XQ (reprint author), Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA.; Pan, XQ (reprint author), Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA.; Li, LJ (reprint author), Taiwan Semicond Mfg Co, Corp Res & Chief Technol Off, Hsinchu 30075, Taiwan.
2018-02-01
Source PublicationNANO LETTERS
ISSN1530-6984
Volume18Issue:2Pages:1253-1258
AbstractEnriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered alpha-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically inter correlated out-of-plane and in-plane polarization, where the reversal. of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (similar to 1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory, device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.; Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered alpha-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically inter correlated out-of-plane and in-plane polarization, where the reversal. of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (similar to 1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory, device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.
description.department[cui, chaojie ; hu, wei-jin ; li, peng ; zhang, xixiang ; alshareef, husam n. ; wu, tom ; li, lain-jong] king abdullah univ sci & technol, phys sci & engn div, jeddah 239556900, saudi arabia ; [hu, wei-jin] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, liaoning, peoples r china ; [yan, xingu ; gao, wenpei ; li, linze ; pan, xiaoqing] univ calif irvine, dept chem engn & mat sci, irvine, ca 92697 usa ; [addiego, christopher ; pan, xiaoqing] univ calif irvine, dept phys & astron, irvine, ca 92697 usa ; [wang, yao ; cheng, yingchun] nanjing tech univ, jiangsu natl synerget innovat ctr adv mat, key lab flexible elect, nanjing 211816, jiangsu, peoples r china ; [wang, yao ; cheng, yingchun] nanjing tech univ, jiangsu natl synerget innovat ctr adv mat, inst adv mat, nanjing 211816, jiangsu, peoples r china ; [wang, zhe ; zhu, wenguang] univ sci & technol china, icqd, hefei natl lab phys sci microscale, synerget innovat ctr quantum informat & quantum p, hefei 230026, anhui, peoples r china ; [wang, zhe ; zhu, wenguang] univ sci & technol china, key lab strongly coupled quantum matter phys cas, hefei 230026, anhui, peoples r china ; [li, lain-jong] taiwan semicond mfg co, corp res & chief technol off, hsinchu 30075, taiwan
KeywordThin-films Phase-transformation Alpha-in2se3 Piezoelectricity Temperature Discovery Crystal
Subject AreaChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
Funding OrganizationKing Abdullah University of Science and Technology (Saudi Arabia); Department of Energy (DOE), Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-5C0014430]; Irvine Materials Research Institute (IMRI)
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79539
Collection中国科学院金属研究所
Corresponding AuthorHu, WJ; Li, LJ (reprint author), King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Jeddah 239556900, Saudi Arabia.; Hu, WJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Pan, XQ (reprint author), Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA.; Pan, XQ (reprint author), Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA.; Li, LJ (reprint author), Taiwan Semicond Mfg Co, Corp Res & Chief Technol Off, Hsinchu 30075, Taiwan.
Recommended Citation
GB/T 7714
Cui, CJ,Hu, WJ,Yan, XG,et al. Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3[J]. NANO LETTERS,2018,18(2):1253-1258.
APA Cui, CJ.,Hu, WJ.,Yan, XG.,Addiego, C.,Gao, WP.,...&Li, LJ .(2018).Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3.NANO LETTERS,18(2),1253-1258.
MLA Cui, CJ,et al."Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3".NANO LETTERS 18.2(2018):1253-1258.
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