Advanced   Register
IMR OpenIR  > 中国科学院金属研究所  > 期刊论文

题名: Highly porous nano-SiC with very low thermal conductivity and excellent high temperature behavior
作者: Wan, P;  Wang, JY
发表日期: 2018-2-1
摘要: Highly porous nano-SiC is fabricated by partial sintering and decarburizing process using SiC nano-powders as starting materials and graphite flakes as pore forming agents. The prepared porous nano-SiC ceramics possess multiple pore structures, including well-distributed meso-pores in the skeleton and interconnected flakelike micro-pores. The samples prepared at 1800 degrees C have relatively low thermal conductivities of 5.61 similar to 0.25 W m(-1) K-1 with porosities of 55.5-76.1%. While the samples sintered at 1500 degrees C with porosities between 54.0% to 76.3% show very low thermal conductivities of 0.74 similar to 0.14 W m(-1) K-1, which is attributed to the integrated nano-scale phonon-scattering mechanisms and duplex pore structures. Porous nano-SiC ceramics also show good retention of elastic stiffness up to 1350 degrees C and low thermal conductivity at 1400 degrees C. Our results shed light on porous nano-SiC as a promising thermal insulator used in extreme thermal and chemical environments.
Appears in Collections:中国科学院金属研究所_期刊论文

Files in This Item:

There are no files associated with this item.

Recommended Citation:
Wan, P,Wang, JY. Highly Porous Nano-sic With Very Low Thermal Conductivity And Excellent High Temperature Behavior[J]. Journal Of The European Ceramic Society,2018,38(2):463-467.

SCI Citaion Data:
 Recommend this item
 Sava as my favorate item
 Show this item's statistics
 Export Endnote File
Google Scholar
 Similar articles in Google Scholar
 [Wan, P]'s Articles
 [Wang, JY]'s Articles
CSDL cross search
 Similar articles in CSDL Cross Search
 [Wan, P]‘s Articles
 [Wang, JY]‘s Articles
Scirus search
 Similar articles in Scirus
Related Copyright Policies
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to  Add to Digg  Add to Reddit 
所有评论 (0)
内 容:
Email:  *
验证码:   刷新
标 题:
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.



Valid XHTML 1.0!
Copyright © 2007-2018  中国科学院金属研究所  -Feedback
Powered by CSpace