| 一种适用于氢化物气相外延生长氮化镓膜的基片台 | |
| 姜辛; 刘宝丹; 刘鲁生; 张兴来 | |
| 2017-02-15 | |
| Rights Holder | 中国科学院金属研究所 |
| Subtype | 实用新型 |
| Patent Number | 201620792540.2 |
| Document Type | 专利 |
| Identifier | http://ir.imr.ac.cn/handle/321006/79795 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | 姜辛,刘宝丹,刘鲁生,等. 一种适用于氢化物气相外延生长氮化镓膜的基片台. 201620792540.2[P]. 2017-02-15. |
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