Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates

doi:10.1088/1361-6528/aac457

IMR OpenIR

	Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates
	Li,Mingze 1,2; Wang,Zhenhua 1,2; Yang,Liang 1,2; Pan,Desheng 1,2; Li,Da 1,2; Gao,Xuan P A 3; Zhang,Zhidong 1,2
	2018-06-04
发表期刊	Nanotechnology
ISSN	0957-4484
卷号	29 期号:31
摘要	Abstract Controlling the growth direction (planar versus vertical) and surface-to-bulk ratio can lead to lots of unique properties for two-dimensional layered materials. We report a simple method to fabricate continuous films of vertical Bi2Se3 nanoplates on Si substrate and investigate the quantum transport properties of such films. In contrast to (001) oriented planar Bi2Se3 nanoplate film, vertical Bi2Se3 nanoplate films are enclosed by (015) facets, which possess high surface-to-bulk ratio that can enhance the quantum transport property of topological surface states. And by controlling the compactness of vertical Bi2Se3 nanoplates, we realized an effective tuning of the weak antilocalization effect from topological surface states in Bi2Se3 films. Our work paves a way for exploring the unique transport properties of this unconventional structure topological insulator film.
关键词	vertical growth Bi2Se3 thin film weak antilocalization
DOI	10.1088/1361-6528/aac457
语种	英语
WOS记录号	IOP:0957-4484-29-31-aac457
出版者	IOP Publishing
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/80518
专题	中国科学院金属研究所
作者单位	1.National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China 2.School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, People’s Republic of China 3.Department of Physics, Case Western Reserve University, Cleveland, OH 44106, United States of America
推荐引用方式 GB/T 7714	Li,Mingze,Wang,Zhenhua,Yang,Liang,et al. Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates[J]. Nanotechnology,2018,29(31).
APA	Li,Mingze.,Wang,Zhenhua.,Yang,Liang.,Pan,Desheng.,Li,Da.,...&Zhang,Zhidong.(2018).Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates.Nanotechnology,29(31).
MLA	Li,Mingze,et al."Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates".Nanotechnology 29.31(2018).