Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1?xSnxTe (111) thin films | |
Zhang,Anqi1,2; Wei,Feng1,3; Yan,Chenhui1,3; Wang,Fei1,3; Ma,Song1; Zhang,Zhidong1 | |
2019-04-23 | |
发表期刊 | Nanotechnology
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ISSN | 0957-4484 |
卷号 | 30期号:27 |
摘要 | Abstract We report the magneotransport studies on the topological crystalline insulator (TCI) Pb1?xSnxTe (111) single crystal thin films grown by molecular beam epitaxy. By decreasing Sn content, an enhanced sheet resistance and decreased hole density are observed in Pb1?xSnxTe (111) thin films. A weak antilocalization likely related to the topological surface states is observed in transport of Pb1?xSnxTe (x?>?0.4) thin films, whereas a weak localization is displayed in Pb1?xSnxTe (x?0.4) thin films. This tunable weak antilocalization to weak localization transition is attributed to the open of Dirac gap because of the topological phase transition in TCI Pb1?xSnxTe. Our research has a potential application in the tunable electronic and spintronic devices and is very significant to the fundamental research based on TCI Pb1?xSnxTe thin film. |
关键词 | topological crystalline insulator Pb1?xSnxTe (111) topological phase transition weak antilocalization weak localization |
DOI | 10.1088/1361-6528/ab13cf |
语种 | 英语 |
WOS记录号 | IOP:0957-4484-30-27-ab13cf |
出版者 | IOP Publishing |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/80541 |
专题 | 中国科学院金属研究所 |
作者单位 | 1.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China 2.School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, People’s Republic of China 3.University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China |
推荐引用方式 GB/T 7714 | Zhang,Anqi,Wei,Feng,Yan,Chenhui,et al. Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1?xSnxTe (111) thin films[J]. Nanotechnology,2019,30(27). |
APA | Zhang,Anqi,Wei,Feng,Yan,Chenhui,Wang,Fei,Ma,Song,&Zhang,Zhidong.(2019).Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1?xSnxTe (111) thin films.Nanotechnology,30(27). |
MLA | Zhang,Anqi,et al."Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1?xSnxTe (111) thin films".Nanotechnology 30.27(2019). |
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