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| Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer | |
| Yan, Shili; Huang, Hai; Xie, Zhijian; Ye, Guojun; Li, Xiao-Xi; Taniguchi, Takashi; Watanabe, Kenji; Han, Zheng; Chen, Xianhui; Wang, Jianlu; Chen, Jian-Hao | |
| 2019-11-13 | |
| Source Publication | ACS APPLIED MATERIALS & INTERFACES
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| ISSN | 1944-8244 |
| Volume | 11Issue:45Pages:42358-42364 |
| Abstract | Two-dimensional material-based ferroelectric field-effect transistors (2D-FeFETs) hold great promise in information storage and processing. However, an often-observed and hard-to-control anti-hysteresis response of 2D-FeFETs, for example, hysteretic switching of the resistance states of the devices opposite to that of the actual polarization of the ferroelectric dielectric, represents a major issue in the industrial applications of such devices. Here, we demonstrate a van der Waals buffer technique that eliminates anti-hysteresis in black phosphorus (BP) 2D-FeFETs and restores their intrinsic hysteretic behavior. Our modified BP 2D-FeFETs showed outstanding performance including high room-temperature carrier mobility, robust bistable states with fast response to a gate, a large on/off ratio at zero gate voltage, a large and considerably more stable memory window, and a long retention time. During repeated gate operation, the memory window of the buffered device is similar to 7000 times more stable than the unbuffered device. Such a method could be crucial in future information technological applications that utilize the intrinsic properties of 2D-FeFETs. |
| Keyword | black phosphorus P(VDF-TrFE) nonvolatile ferroelectric memories field-effect transistors (FETs) anti-hysteresis |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000497263600056 |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/80630 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | Yan, Shili,Huang, Hai,Xie, Zhijian,et al. Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(45):42358-42364. |
| APA | Yan, Shili.,Huang, Hai.,Xie, Zhijian.,Ye, Guojun.,Li, Xiao-Xi.,...&Chen, Jian-Hao.(2019).Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer.ACS APPLIED MATERIALS & INTERFACES,11(45),42358-42364. |
| MLA | Yan, Shili,et al."Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer".ACS APPLIED MATERIALS & INTERFACES 11.45(2019):42358-42364. |
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