A vertical silicon-graphene-germanium transistor
Liu, Chi; Ma, Wei; Chen, Maolin; Ren, Wencai; Sun, Dongming
AbstractGraphene-base transistors have been proposed for high-frequency applications because of the negligible base transit time induced by the atomic thickness of graphene. However, generally used tunnel emitters suffer from high emitter potential-barrier-height which limits the transistor performance towards terahertz operation. To overcome this issue, a graphene-base heterojunction transistor has been proposed theoretically where the graphene base is sandwiched by silicon layers. Here we demonstrate a vertical silicon-graphene-germanium transistor where a Schottky emitter constructed by single-crystal silicon and single-layer graphene is achieved. Such Schottky emitter shows a current of 692 A cm(-2) and a capacitance of 41 nF cm(-2), and thus the alpha cut-off frequency of the transistor is expected to increase from about 1 MHz by using the previous tunnel emitters to above 1 GHz by using the current Schottky emitter. With further engineering, the semiconductor-graphene-semiconductor transistor is expected to be one of the most promising devices for ultra-high frequency operation.
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WOS IDWOS:000492835100011
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GB/T 7714
Liu, Chi,Ma, Wei,Chen, Maolin,et al. A vertical silicon-graphene-germanium transistor[J]. NATURE COMMUNICATIONS,2019,10.
APA Liu, Chi,Ma, Wei,Chen, Maolin,Ren, Wencai,&Sun, Dongming.(2019).A vertical silicon-graphene-germanium transistor.NATURE COMMUNICATIONS,10.
MLA Liu, Chi,et al."A vertical silicon-graphene-germanium transistor".NATURE COMMUNICATIONS 10(2019).
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