IMR OpenIR
A FinFET with one atomic layer channel
Mao-Lin Chen; Xingdan Sun; Hang Liu; Hanwen Wang; Qianbing Zhu; Shasha Wang; Haifeng Du; Baojuan Dong; Jing Zhang; Yun Sun; Song Qiu; Thomas Alava; Song Liu; Dong-Ming Sun; Zheng Han
2020
Source Publicationnaturecommunications
ISSN2041-1723
Volume11Issue:1Pages:1-7
AbstractSince its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin ( W fin \documentclass12pt{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{{\rm{fin}}}$$\end{document} ) in FinFETs has shrunk from about 150 nm to a few nanometers. However, W fin \documentclass12pt{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{{\rm{fin}}}$$\end{document} seems to have been levelling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting a template-growth method, different types of mono-layered two-dimensional crystals are isolated in a vertical manner. Based on this, FinFETs with one atomic layer fin are obtained, with on ~ 1 0 7 \documentclass12pt{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sim\!\! 10^{7}$$\end{document} . Our findings push the FinFET to the sub 1 nm fin-width limit, and may shed light on the next generation nanoelectronics for higher integration and lower power consumption.
DOI10.1038/s41467-020-15096-0
Language英语
WOS IDWOS:000543997700011
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/80697
Collection中国科学院金属研究所
Affiliation1.Institute of Metal Research, Chinese Academy of Sciences
2.University of Science and Technology of China
3.Hunan University
4.High Magnetic Field Laboratory and University of Science and Technology of China, Chinese Academy of Science (CAS)
5.Shanxi University
6.Shanxi University
7.Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Science
8.Université Grenoble Alpes, CEA, LETI
Recommended Citation
GB/T 7714
Mao-Lin Chen,Xingdan Sun,Hang Liu,et al. A FinFET with one atomic layer channel[J]. naturecommunications,2020,11(1):1-7.
APA Mao-Lin Chen.,Xingdan Sun.,Hang Liu.,Hanwen Wang.,Qianbing Zhu.,...&Zheng Han.(2020).A FinFET with one atomic layer channel.naturecommunications,11(1),1-7.
MLA Mao-Lin Chen,et al."A FinFET with one atomic layer channel".naturecommunications 11.1(2020):1-7.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Mao-Lin Chen]'s Articles
[Xingdan Sun]'s Articles
[Hang Liu]'s Articles
Baidu academic
Similar articles in Baidu academic
[Mao-Lin Chen]'s Articles
[Xingdan Sun]'s Articles
[Hang Liu]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Mao-Lin Chen]'s Articles
[Xingdan Sun]'s Articles
[Hang Liu]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.