A FinFET with one atomic layer channel

doi:10.1038/s41467-020-15096-0

IMR OpenIR

	A FinFET with one atomic layer channel
	Mao-Lin Chen ; Xingdan Sun ; Hang Liu ; Hanwen Wang ; Qianbing Zhu ; Shasha Wang ; Haifeng Du ; Baojuan Dong ; Jing Zhang ; Yun Sun ; Song Qiu ; Thomas Alava ; Song Liu ; Dong-Ming Sun ; Zheng Han
	2020
发表期刊	naturecommunications
ISSN	2041-1723
卷号	11 期号:1 页码:1-7
摘要	Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin ( W fin \documentclass12pt{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{{\rm{fin}}}$$\end{document} ) in FinFETs has shrunk from about 150 nm to a few nanometers. However, W fin \documentclass12pt{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{{\rm{fin}}}$$\end{document} seems to have been levelling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting a template-growth method, different types of mono-layered two-dimensional crystals are isolated in a vertical manner. Based on this, FinFETs with one atomic layer fin are obtained, with on ~ 1 0 7 \documentclass12pt{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sim\!\! 10^{7}$$\end{document} . Our findings push the FinFET to the sub 1 nm fin-width limit, and may shed light on the next generation nanoelectronics for higher integration and lower power consumption.
DOI	10.1038/s41467-020-15096-0
语种	英语
WOS记录号	WOS:000543997700011
引用统计	被引频次：118[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/80697
专题	中国科学院金属研究所
作者单位	1.Institute of Metal Research, Chinese Academy of Sciences 2.University of Science and Technology of China 3.Hunan University 4.High Magnetic Field Laboratory and University of Science and Technology of China, Chinese Academy of Science (CAS) 5.Shanxi University 6.Shanxi University 7.Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Science 8.Université Grenoble Alpes, CEA, LETI
推荐引用方式 GB/T 7714	Mao-Lin Chen,Xingdan Sun,Hang Liu,et al. A FinFET with one atomic layer channel[J]. naturecommunications,2020,11(1):1-7.
APA	Mao-Lin Chen.,Xingdan Sun.,Hang Liu.,Hanwen Wang.,Qianbing Zhu.,...&Zheng Han.(2020).A FinFET with one atomic layer channel.naturecommunications,11(1),1-7.
MLA	Mao-Lin Chen,et al."A FinFET with one atomic layer channel".naturecommunications 11.1(2020):1-7.