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Interfacial oxygen-octahedral-tilting-driven electrically tunable topological Hall effect in ultrathin SrRuO3 films
Gu, Youdi; Wei, Yi-Wen; Xu, Kun; Zhang, Hongrui; Wan, Fei; Li, Fan; Saleem, Muhammad Shahrukh; Chang, Cui-Zu; Sun, Jirong; Song, Cheng; Feng, Ji; Zhong, Xiaoyan; Liu, Wei; Zhang, Zhidong; Zhu, Jing; Pan, Feng
2019-10-02
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume52Issue:40
AbstractTopological spin textures as an emerging class of topological matter offer a medium for information storage and processing. The recently discovered topological Hall effect (THE) is considered as a fingerprint for electrically probing the Dzyaloshinskii-Moriya (DM) interaction and corresponding non-trivial spin-textures. In this paper, the THE and its electrical control are observed in ultrathin (<= 8 unit cells. u.c.) 4D ferromagnetic SrRuO3 films grown on SrTiO3(001) substrates, indicating the existence of gate-bias-tunable DM interaction in the single SrRuO3 layer without contacting 5D oxide SrIrO3 layer. High-resolution lattice structure analysis revealed that the interfacial RuO6 octahedral tilting induced by local orthorhombic-to-tetragonal structural phase transition exists across the SrRuO3/SrTiO3 interface, which naturally breaks the inversion symmetry. Our theoretical calculations demonstrate that the DM interaction arises owing to the broken inversion symmetry and strong spin-orbit interaction of 4D SrRuO3. This interfacial RuO6 octahedral tilting-induced DM interaction can stabilize the Neel-type magnetic skyrmions, which in turn accounts for the observed THE in transport. Besides the fundamental significance, the understanding of THE in oxides and its electrical manipulation presented in this work could advance the low power cost topological electronic and spintronic applications.
Keywordoxygen octahedral tilting topological Hall effect SrRuO3 films gate-tunnable Dzyaloshinskii-Moriya interaction oxide spintronics
Indexed BySCI
Language英语
WOS IDWOS:000477646100001
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/80714
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Gu, Youdi,Wei, Yi-Wen,Xu, Kun,et al. Interfacial oxygen-octahedral-tilting-driven electrically tunable topological Hall effect in ultrathin SrRuO3 films[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2019,52(40).
APA Gu, Youdi.,Wei, Yi-Wen.,Xu, Kun.,Zhang, Hongrui.,Wan, Fei.,...&Pan, Feng.(2019).Interfacial oxygen-octahedral-tilting-driven electrically tunable topological Hall effect in ultrathin SrRuO3 films.JOURNAL OF PHYSICS D-APPLIED PHYSICS,52(40).
MLA Gu, Youdi,et al."Interfacial oxygen-octahedral-tilting-driven electrically tunable topological Hall effect in ultrathin SrRuO3 films".JOURNAL OF PHYSICS D-APPLIED PHYSICS 52.40(2019).
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