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Control of the metal-to-insulator transition by substrate orientation in nickelates | |
Peng, J. J.; Ouyang, B.; Liu, H. Y.; Hao, C. S.; Tang, S. S.; Gu, Y. D.; Yan, Y. | |
2019-10-01 | |
Source Publication | AIP ADVANCES
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Volume | 9Issue:10 |
Abstract | We proved that the critical thickness for metal-to-insulator transition (MIT) of LaNiO3 could be controlled by substrate orientation. By means of density functional theory calculations, films grown on SrTiO3 substrates with (001), (110) and (111) orientations have different amount of charge transfer across the interface. Different charge transfer induces different interfacial conductivity behavior and at the same time modifies the carrier density of adjacent LaNiO3 films. The manipulation of MIT by substrate orientation can be achieved through interfacial charge transfer induced interfacial conductive layer with the modified conductivity of LNO layer. (c) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
Indexed By | SCI |
Language | 英语 |
WOS ID | WOS:000496806000049 |
Publisher | AMER INST PHYSICS |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/80719 |
Collection | 中国科学院金属研究所 |
Recommended Citation GB/T 7714 | Peng, J. J.,Ouyang, B.,Liu, H. Y.,et al. Control of the metal-to-insulator transition by substrate orientation in nickelates[J]. AIP ADVANCES,2019,9(10). |
APA | Peng, J. J..,Ouyang, B..,Liu, H. Y..,Hao, C. S..,Tang, S. S..,...&Yan, Y..(2019).Control of the metal-to-insulator transition by substrate orientation in nickelates.AIP ADVANCES,9(10). |
MLA | Peng, J. J.,et al."Control of the metal-to-insulator transition by substrate orientation in nickelates".AIP ADVANCES 9.10(2019). |
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