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Control of the metal-to-insulator transition by substrate orientation in nickelates
Peng, J. J.; Ouyang, B.; Liu, H. Y.; Hao, C. S.; Tang, S. S.; Gu, Y. D.; Yan, Y.
2019-10-01
Source PublicationAIP ADVANCES
Volume9Issue:10
AbstractWe proved that the critical thickness for metal-to-insulator transition (MIT) of LaNiO3 could be controlled by substrate orientation. By means of density functional theory calculations, films grown on SrTiO3 substrates with (001), (110) and (111) orientations have different amount of charge transfer across the interface. Different charge transfer induces different interfacial conductivity behavior and at the same time modifies the carrier density of adjacent LaNiO3 films. The manipulation of MIT by substrate orientation can be achieved through interfacial charge transfer induced interfacial conductive layer with the modified conductivity of LNO layer. (c) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Indexed BySCI
Language英语
WOS IDWOS:000496806000049
PublisherAMER INST PHYSICS
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/80719
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Peng, J. J.,Ouyang, B.,Liu, H. Y.,et al. Control of the metal-to-insulator transition by substrate orientation in nickelates[J]. AIP ADVANCES,2019,9(10).
APA Peng, J. J..,Ouyang, B..,Liu, H. Y..,Hao, C. S..,Tang, S. S..,...&Yan, Y..(2019).Control of the metal-to-insulator transition by substrate orientation in nickelates.AIP ADVANCES,9(10).
MLA Peng, J. J.,et al."Control of the metal-to-insulator transition by substrate orientation in nickelates".AIP ADVANCES 9.10(2019).
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