Gallium antisite defect and residual acceptors in undoped GaSb

doi:10.1016/j.physleta.2004.09.056

IMR OpenIR

	Gallium antisite defect and residual acceptors in undoped GaSb
	Hu, WG ; Wang, Z ; Su, BF ; Dai, YQ ; Wang, SJ ; Zhao, YW
通讯作者	Wang, Z(wangz@whu.edu.cn)
	2004-11-15
发表期刊	PHYSICS LETTERS A
ISSN	0375-9601
卷号	332 期号:3-4 页码:286-290
摘要	Undoped Ga(Sb) samples were investigated by positron lifetime spectroscopy (PAS) and the coincident Doppler broadening (CDB) technique. PAS measurement indicated that there were monovacancy-type defects in undoped Ga(Sb) samples, which were identified to be predominantly Ca vacancy (V(Ga)) related defects by combining the CDB measurements. After annealing of these samples at 520 C, positron shallow trapping have been observed and should be due to Ga(Sb) defects. Undoped Ga(Sb) is intrinsically p-type having a residual carrier density of 10(16)-10(17) cm(-3). And the Ga(Sb) antisite defects are stable in the (0), (1-) and (2-) charge states and act as a double acceptor. Thus, we infer that Ga(Sb) antisite defects are the acceptor contributing to the p-type conduction for undoped samples. (C) 2004 Elsevier B.V All rights reserved.
关键词	GaSb coincidence Doppler broadening positron annihilation defect
DOI	10.1016/j.physleta.2004.09.056
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000225044500017
出版者	ELSEVIER SCIENCE BV
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/80769
通讯作者	Wang, Z
作者单位	1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing, Peoples R China
推荐引用方式 GB/T 7714	Hu, WG,Wang, Z,Su, BF,et al. Gallium antisite defect and residual acceptors in undoped GaSb[J]. PHYSICS LETTERS A,2004,332(3-4):286-290.
APA	Hu, WG,Wang, Z,Su, BF,Dai, YQ,Wang, SJ,&Zhao, YW.(2004).Gallium antisite defect and residual acceptors in undoped GaSb.PHYSICS LETTERS A,332(3-4),286-290.
MLA	Hu, WG,et al."Gallium antisite defect and residual acceptors in undoped GaSb".PHYSICS LETTERS A 332.3-4(2004):286-290.