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Influence of bias voltage on diamond-like carbon film deposited by arc ion plating
Zou, YS; Wang, W; Zheng, JD; Sun, C; Huang, RF; Wen, LS
通讯作者Zou, YS(yshzou@imr.ac.cn)
2004-05-11
发表期刊ACTA METALLURGICA SINICA
ISSN0412-1961
卷号40期号:5页码:537-540
摘要The microstructures of the diamond-like carbon (DLC) films deposited on Si (100) substrate by using arc ion plating (AIP) under different pulse bias voltage were characterized using Raman spectra and X-ray photoelectron spectra (XPS). The results show that the ratio I-D/I-G decreases and sp(3) bond content increases with increasing pulse bias voltage firstly, and then the ratio I-D/I-G increases and sp(3) bond content decreases after the pulse bias voltage exceeding -200 V. The minimal ratio I-D/I-G, is 0.70 and the content of sp(3) bond is 26.7% at the bias voltage of -200 V. The hardness and modulus determined by using nanoindentation technique increase and then decrease with increasing pulse bias voltage. The hardness and modulus of the DLC films obtained at bias voltage of -200 V reaches a maximum value of 30.8 and 250.1 GPa, respectively.
关键词diamond-like carbon film arc ion plating pulse bias voltage microstructure mechanical property
收录类别SCI
语种英语
WOS研究方向Metallurgy & Metallurgical Engineering
WOS类目Metallurgy & Metallurgical Engineering
WOS记录号WOS:000221838900019
出版者SCIENCE CHINA PRESS
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/80859
专题中国科学院金属研究所
通讯作者Zou, YS
作者单位Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
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GB/T 7714
Zou, YS,Wang, W,Zheng, JD,et al. Influence of bias voltage on diamond-like carbon film deposited by arc ion plating[J]. ACTA METALLURGICA SINICA,2004,40(5):537-540.
APA Zou, YS,Wang, W,Zheng, JD,Sun, C,Huang, RF,&Wen, LS.(2004).Influence of bias voltage on diamond-like carbon film deposited by arc ion plating.ACTA METALLURGICA SINICA,40(5),537-540.
MLA Zou, YS,et al."Influence of bias voltage on diamond-like carbon film deposited by arc ion plating".ACTA METALLURGICA SINICA 40.5(2004):537-540.
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