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Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric
Xue, Fei; He, Xin; Retamal, Jose Ramon Duran; Han, Ali; Zhang, Junwei; Liu, Zhixiong; Huang, Jing-Kai; Hu, Weijin; Tung, Vincent; He, Jr-Hou; Li, Lain-Jong; Zhang, Xixiang
2019-07-01
Source PublicationADVANCED MATERIALS
ISSN0935-9648
Volume31Issue:29
AbstractMemristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal alpha-In2Se3, a semiconducting van der Waals ferroelectric material. The planar memristor based on in-plane (IP) polarization of alpha-In2Se3 exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance-switching ratio. The integration of vertical alpha-In2Se3 memristors based on out-of-plane (OOP) polarization is demonstrated with a device density of 7.1 x 10(9) in.(-2) and a resistance-switching ratio of well over 10(3). A multidirectionally operated alpha-In2Se3 memristor is also proposed, enabling the control of the OOP (or IP) resistance state directly by an IP (or OOP) programming pulse, which has not been achieved in other reported memristors. The remarkable behavior and diverse functionalities of these ferroelectric alpha-In2Se3 memristors suggest opportunities for future logic circuits and complex neuromorphic computing.
Keywordferroelectrics gate tunability memristors multidirectional programming
Indexed BySCI
Language英语
WOS IDWOS:000477975900021
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/80931
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Xue, Fei,He, Xin,Retamal, Jose Ramon Duran,et al. Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric[J]. ADVANCED MATERIALS,2019,31(29).
APA Xue, Fei.,He, Xin.,Retamal, Jose Ramon Duran.,Han, Ali.,Zhang, Junwei.,...&Zhang, Xixiang.(2019).Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric.ADVANCED MATERIALS,31(29).
MLA Xue, Fei,et al."Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric".ADVANCED MATERIALS 31.29(2019).
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