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Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs
Li, ZC; Zhang, H; Xu, YB
Corresponding AuthorLi, ZC(zhchli@imr.ac.cn)
2004-02-01
Source PublicationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN1369-8001
Volume7Issue:1-2Pages:19-25
AbstractIn situ observation of the nucleation and growth stimulated by an electron beam in amorphous GaAs was performed using a high-resolution electron microscopy. The results showed that the crystallization was closely related to the current density of the electron beam. Crystallization could not take place when the current density was 50 pA/cm(2), nanocrystals with the random orientation formed under the 74 pA/cm(2) electron beam, large grains and twining structure formed during the crystallization induced by the 93 pA/cm(2) electron beam. Ionization process and electron-beam heating were suggested to be the possible mechanisms for the irradiation-induced crystallization. (C) 2004 Elsevier Ltd. All rights reserved.
Keywordamorphous GaAs electron beam irradiation crystallization electron microscopy
DOI10.1016/j.mssp.2003.10.002
Indexed BySCI
Language英语
WOS Research AreaEngineering ; Materials Science ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000223542600004
PublisherELSEVIER SCI LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/81007
Corresponding AuthorLi, ZC
Affiliation1.Royal Inst Technol, Dept Mat Sci & Engn, S-10044 Stockholm, Sweden
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Li, ZC,Zhang, H,Xu, YB. Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2004,7(1-2):19-25.
APA Li, ZC,Zhang, H,&Xu, YB.(2004).Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,7(1-2),19-25.
MLA Li, ZC,et al."Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 7.1-2(2004):19-25.
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