Tailoring the magnetic anisotropy of Py/Ni bilayer films using well aligned atomic steps on Cu(001)

doi:10.1038/srep11055

IMR OpenIR

	Tailoring the magnetic anisotropy of Py/Ni bilayer films using well aligned atomic steps on Cu(001)
	Ma, S.1,2; Tan, A.2; Deng, J. X.2; Li, J.2; Zhang, Z. D.1; Hwang, C.3; Qiu, Z. Q.2
通讯作者	Ma, S.(songma@imr.ac.cn)
	2015-06-11
发表期刊	SCIENTIFIC REPORTS
ISSN	2045-2322
卷号	5 页码:10
摘要	Tailoring the spin orientation at the atomic scale has been a key task in spintronics technology. While controlling the out-of-plane to in-plane spin orientation has been achieved by a precise control of the perpendicular magnetic anisotropy at atomic layer thickness level, a design and control of the in-plane magnetic anisotropy has not yet been well developed. On well aligned atomic steps of a 6 degrees vicinal Cu(001) surface with steps parallel to the [110] axis, we grow Py/Ni overlayer films epitaxially to permit a systematic exploration of the step-induced in-plane magnetic anisotropy as a function of both the Py and the Ni film thicknesses. We found that the atomic steps from the vicinal Cu(001) induce an in-plane uniaxial magnetic anisotropy that favors both Py and Ni magnetizations perpendicular to the steps, opposite to the behavior of Co on vicinal Cu(001). In addition, thickness-dependent study shows that the Ni films exhibit different magnetic anisotropy below and above similar to 6 ML Ni thickness.
资助者	National Science Foundation through the Global Research Laboratory project of Korea ; China Scholarship Council ; National Science Foundation of China
DOI	10.1038/srep11055
收录类别	SCI
语种	英语
资助项目	National Science Foundation through the Global Research Laboratory project of Korea[DMR-1210167 NRF] ; China Scholarship Council ; National Science Foundation of China[51271178] ; National Science Foundation of China[51331006]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000356097100001
出版者	NATURE PUBLISHING GROUP
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/81192
通讯作者	Ma, S.
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA 3.Korea Res Inst Stand & Sci, Taejon 305340, South Korea
推荐引用方式 GB/T 7714	Ma, S.,Tan, A.,Deng, J. X.,et al. Tailoring the magnetic anisotropy of Py/Ni bilayer films using well aligned atomic steps on Cu(001)[J]. SCIENTIFIC REPORTS,2015,5:10.
APA	Ma, S..,Tan, A..,Deng, J. X..,Li, J..,Zhang, Z. D..,...&Qiu, Z. Q..(2015).Tailoring the magnetic anisotropy of Py/Ni bilayer films using well aligned atomic steps on Cu(001).SCIENTIFIC REPORTS,5,10.
MLA	Ma, S.,et al."Tailoring the magnetic anisotropy of Py/Ni bilayer films using well aligned atomic steps on Cu(001)".SCIENTIFIC REPORTS 5(2015):10.