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Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors
Khan, Usman; Luo, Yuting; Tang, Lei; Teng, Changjiu; Liu, Jiaman; Liu, Bilu; Cheng, Hui-Ming
2019-04-04
Source PublicationADVANCED FUNCTIONAL MATERIALS
ISSN1616-301X
Volume29Issue:14
AbstractAtomically thin 2D materials have received intense interest both scientifically and technologically. Bismuth oxyselenide (Bi2O2Se ) is a semiconducting 2D material with high electron mobility and good stability, making it promising for high-performance electronics and optoelectronics. Here, an ambient-pressure vapor-solid (VS) deposition approach for the growth of millimeter-size 2D Bi2O2Se single crystal domains with thicknesses down to one monolayer is reported. The VS-grown 2D Bi2O2Se has good crystalline quality, chemical uniformity, and stoichiometry. Field-effect transistors (FETs) are fabricated using this material and they show a small contact resistivity of 55.2 Omega cm measured by a transfer line method. Upon light irradiation, a phototransistor based on the Bi2O2Se FETs exhibits a maximum responsivity of 22 100 AW(-1), which is a record among currently reported 2D semiconductors and approximately two orders of magnitude higher than monolayer MoS2. The Bi2O2Se phototransistor shows a gate tunable photodetectivity up to 3.4 x 10(15) Jones and an on/off ratio up to approximate to 10(9), both of which are much higher than phototransistors based on other 2D materials reported so far. The results of this study indicate a method to grow large 2D Bi2O2Se single crystals that have great potential for use in optoelectronic applications.
KeywordBi2O2Se contact resistance detectivity millimeter-size single crystal phototransistor responsivity vapor-solid deposition
Indexed BySCI
Language英语
WOS IDWOS:000467109100013
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/81197
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Khan, Usman,Luo, Yuting,Tang, Lei,et al. Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors[J]. ADVANCED FUNCTIONAL MATERIALS,2019,29(14).
APA Khan, Usman.,Luo, Yuting.,Tang, Lei.,Teng, Changjiu.,Liu, Jiaman.,...&Cheng, Hui-Ming.(2019).Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors.ADVANCED FUNCTIONAL MATERIALS,29(14).
MLA Khan, Usman,et al."Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors".ADVANCED FUNCTIONAL MATERIALS 29.14(2019).
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