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AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON
WU, E; XI, XC; LU, XT; SHEN, DY; WANG, XM; QIN, GG
Corresponding AuthorWU, E()
1992-04-01
Source PublicationSCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
ISSN1001-6511
Volume35Issue:4Pages:437-442
AbstractA new EPR defect (labeled Si-PK5) and two previously known defects (Si-S1 and Si-S2) are observed in proton-implanted N-type FZ-lilicon. Our results indicate that Si-PK5 has trigonal symmetry with the <111> direction as its symmetry axis. Its paramagnetic parameters are S = 1/2, g(parallel-to) = 2.0078 and g(perpendicular-to) = 2.0174. According to the empirical methods of classifying defects given by Lee and Corbett and by Sieverts. Si-Pk5 presumably has the structure of bond-centered interstitial. As for Si-S2, the hyperfine splitting of one equivalent Si-29 has been observed for the first time.
KeywordDEFECTS EPR IR ABSORPTION PEAK HYPERFINE SPLITTING PROTON-IMPLANTATION
Indexed BySCI
Language英语
WOS Research AreaMathematics
WOS SubjectMathematics, Applied ; Mathematics
WOS IDWOS:A1992HV40800005
PublisherSCIENCE CHINA PRESS
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/81216
Corresponding AuthorWU, E
Affiliation1.BEIJING UNIV,DEPT TECHNOL PHYS,BEIJING 100871,PEOPLES R CHINA
2.INT CTR MAT PHYS,SHENYANG,PEOPLES R CHINA
Recommended Citation
GB/T 7714
WU, E,XI, XC,LU, XT,et al. AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,1992,35(4):437-442.
APA WU, E,XI, XC,LU, XT,SHEN, DY,WANG, XM,&QIN, GG.(1992).AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON.SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,35(4),437-442.
MLA WU, E,et al."AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON".SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY 35.4(1992):437-442.
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