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Significance of stacking fault energy in bulk nanostructured materials: Insights from Cu and its binary alloys as model systems
An, X. H.; Wu, S. D.; Wang, Z. G.; Zhang, Z. F.
2019-04-01
Source PublicationPROGRESS IN MATERIALS SCIENCE
ISSN0079-6425
Volume101Pages:1-45
AbstractBulk nanostructured (NS) materials processed by severe plastic deformation (SPD) have received considerable attention for several decades. The physical origin of this processing philosophy is to enable substantial grain refinement from a micrometer to a nanoscale level mainly through the activation of fundamental deformation mechanisms: dislocation glide, deformation twinning, and their sophisticated interactions. The formation of nanostructures in NS metallic materials is significantly governed by the quintessential dominance of these two plasticity carriers during SPD, and their mechanical properties are thereby correspondingly affected. According to conventional crystal plasticity, the stacking fault energy (SFE) of materials is one of the most crucial factors primarily controlling which deformation mechanism plays an overwhelming role in accommodating the plasticity. Therefore, a profound understanding of the vital significance of SFE in NS materials can extend and enrich our comprehension of their structure-property relationship, lead to the design of NS metallic materials with superior properties, and pave the path for their perspective applications. Choosing Cu and its binary alloys as model systems, this review extensively surveys the principal influences of SFE on the preferred choice of deformation mechanisms during SPD, microstructural evolution, grain refinement, deformation behavior, and mechanical properties of NS material including tensile properties and cyclic deformation responses.
KeywordNanostructures Severe plastic deformation Stacking fault energy Deformation twinning Strength and ductility Fatigue properties
Indexed BySCI
Language英语
WOS IDWOS:000457514600001
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/81243
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
An, X. H.,Wu, S. D.,Wang, Z. G.,et al. Significance of stacking fault energy in bulk nanostructured materials: Insights from Cu and its binary alloys as model systems[J]. PROGRESS IN MATERIALS SCIENCE,2019,101:1-45.
APA An, X. H.,Wu, S. D.,Wang, Z. G.,&Zhang, Z. F..(2019).Significance of stacking fault energy in bulk nanostructured materials: Insights from Cu and its binary alloys as model systems.PROGRESS IN MATERIALS SCIENCE,101,1-45.
MLA An, X. H.,et al."Significance of stacking fault energy in bulk nanostructured materials: Insights from Cu and its binary alloys as model systems".PROGRESS IN MATERIALS SCIENCE 101(2019):1-45.
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