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AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity
Wu, Feng; Xia, Hui; Sun, Haiding; Zhang, Junwei; Gong, Fan; Wang, Zhen; Chen, Long; Wang, Peng; Long, Mingsheng; Wu, Xing; Wang, Jianlu; Ren, Wencai; Chen, Xiaoshuang; Lu, Wei; Hu, Weida
2019-03-21
Source PublicationADVANCED FUNCTIONAL MATERIALS
ISSN1616-301X
Volume29Issue:12
AbstractVan der Waals heterojunctions made of 2D materials offer competitive opportunities in designing and achieving multifunctional and high-performance electronic and optoelectronic devices. However, due to the significant reverse tunneling current in such thin p-n junctions, a low rectification ratio along with a large reverse current is often inevitable for the heterojunctions. Here, a vertically stacked van der Waals heterojunction (vdWH) tunneling device is reported consisting of black arsenic phosphorus (AsP) and indium selenide (InSe), which shows a record high reverse rectification ratio exceeding 10(7) along with an unusual ultralow forward current below picoampere and a high current on/off ratio over 10(8) simultaneously at room temperature under the proper band alignment design of both the Schottky junction and the heterojunction. Therefore, the vdWH tunneling device can function as an ultrasensitive photodetector with an ultrahigh light on/off ratio of 1 x 10(7), a comparable responsivity of around 1 A W-1, and a high detectivity over 1 x 10(12) Jones in the visible wavelength range. Furthermore, the device exhibits a clear photovoltaic effect and shows a spectral detection capability up to 1550 nm. The work sheds light on developing future electronic and optoelectronic multifunctional devices based on the van der Waals integration of 2D materials with designed band alignment.
Keywordbackward diodes photodiodes rectification tunneling van der Waals heterojunctions
Indexed BySCI
Language英语
WOS IDWOS:000462624900024
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:14[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/81273
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Wu, Feng,Xia, Hui,Sun, Haiding,et al. AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity[J]. ADVANCED FUNCTIONAL MATERIALS,2019,29(12).
APA Wu, Feng.,Xia, Hui.,Sun, Haiding.,Zhang, Junwei.,Gong, Fan.,...&Hu, Weida.(2019).AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity.ADVANCED FUNCTIONAL MATERIALS,29(12).
MLA Wu, Feng,et al."AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity".ADVANCED FUNCTIONAL MATERIALS 29.12(2019).
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