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Aggregation patterns of micron-scale CdO crystals at interface of vapour-solid state
Qin, P; Zhang, JZ; Diao, Z
通讯作者Zhang, JZ(zjz@mail.tsinghua.edu.cn)
2004-10-30
发表期刊PHYSICA B-CONDENSED MATTER
ISSN0921-4526
卷号352期号:1-4页码:127-133
摘要The eliptical, angular, and straight line CdO self-organization aggregates, as well as bush-like crystal clusters were observed on the surfaces of both N <100> and P <111> silicon wafers. The silicon wafers were heated at 580degreesC for 1 h in an evaporation-deposition device. All of the self-organization aggregates deposited on respective ridgelines of the bush-like crystal clusters. The surface defects of both silicon substrates were investigated. The experimental results suggested that the CdO self-organization aggregates were related closely to the topographic condition of the bush-like crystal clusters, and not related directly to the surface defects of the silicon substrates. It testifies to a self-organized critical behaviour of the dynamical system during the vapour-solid phase transition. (C) 2004 Elsevier B.V. All rights reserved.
关键词CdO aggregation patterns vapour-solid phase transition
DOI10.1016/j.physb.2004.07.002
收录类别SCI
语种英语
WOS研究方向Physics
WOS类目Physics, Condensed Matter
WOS记录号WOS:000224735100018
出版者ELSEVIER SCIENCE BV
引用统计
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/81285
通讯作者Zhang, JZ
作者单位1.Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
2.Xinyang Normal Univ, Coll Phys & Elect Engn, Dept Phys, Xinyang 464000, Peoples R China
3.Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
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Qin, P,Zhang, JZ,Diao, Z. Aggregation patterns of micron-scale CdO crystals at interface of vapour-solid state[J]. PHYSICA B-CONDENSED MATTER,2004,352(1-4):127-133.
APA Qin, P,Zhang, JZ,&Diao, Z.(2004).Aggregation patterns of micron-scale CdO crystals at interface of vapour-solid state.PHYSICA B-CONDENSED MATTER,352(1-4),127-133.
MLA Qin, P,et al."Aggregation patterns of micron-scale CdO crystals at interface of vapour-solid state".PHYSICA B-CONDENSED MATTER 352.1-4(2004):127-133.
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