Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe

doi:10.1016/j.mseb.2003.11.002

IMR OpenIR

	Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe
	Wu, XX ; Zheng, WC ; Sheng, T ; Zi, H
通讯作者	Zheng, WC()
	2004-03-15
发表期刊	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN	0921-5107
卷号	107 期号:2 页码:186-188
摘要	The anion position parameter chi of NiS4 cluster formed in the ternary semiconductor CuGaS2 by substitution of Ni+ for Cu+ has been determined by studying the optical spectra and EPR data for CuGaS2:Ni+. The result (chi approximate to 0.263(1)) is consistent with the mean value of the X-ray measurement results reported in two groups of references and also with the calculated value obtained from the conservation of tetrahedral bonds (CTB) plus eta = eta(tet) rule (where eta = c/2a). So, we suggest that the anion position parameter chi in pure CuGaS2 crystal is close to the above value obtained by use of Ni+ ion probe. The optical absorption bands and g factors g(parallel to), g(perpendicular to), of CuGaS2: Ni+ are therefore explained reasonably from the anion position parameter. (C) 2003 Elsevier B.V. All rights reserved.
关键词	structural parameter electron paramagnetic resonance (EPR) optical spectrum crystal-field theory CuGaS2 Ni+
DOI	10.1016/j.mseb.2003.11.002
收录类别	SCI
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS记录号	WOS:000220274200014
出版者	ELSEVIER SCIENCE SA
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/81345
通讯作者	Zheng, WC
作者单位	1.Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China 3.Civil Aviat Flying Inst China, Dept Phys, Guanghan 618307, Peoples R China 4.Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
推荐引用方式 GB/T 7714	Wu, XX,Zheng, WC,Sheng, T,et al. Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2004,107(2):186-188.
APA	Wu, XX,Zheng, WC,Sheng, T,&Zi, H.(2004).Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,107(2),186-188.
MLA	Wu, XX,et al."Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 107.2(2004):186-188.