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Gallium antisite defect and residual acceptors in undoped GaSb
Hu, WG; Wang, Z; Su, BF; Dai, YQ; Wang, SJ; Zhao, YW
Corresponding AuthorWang, Z(wangz@whu.edu.cn)
2004-11-15
Source PublicationPHYSICS LETTERS A
ISSN0375-9601
Volume332Issue:3-4Pages:286-290
AbstractUndoped Ga(Sb) samples were investigated by positron lifetime spectroscopy (PAS) and the coincident Doppler broadening (CDB) technique. PAS measurement indicated that there were monovacancy-type defects in undoped Ga(Sb) samples, which were identified to be predominantly Ca vacancy (V(Ga)) related defects by combining the CDB measurements. After annealing of these samples at 520 C, positron shallow trapping have been observed and should be due to Ga(Sb) defects. Undoped Ga(Sb) is intrinsically p-type having a residual carrier density of 10(16)-10(17) cm(-3). And the Ga(Sb) antisite defects are stable in the (0), (1-) and (2-) charge states and act as a double acceptor. Thus, we infer that Ga(Sb) antisite defects are the acceptor contributing to the p-type conduction for undoped samples. (C) 2004 Elsevier B.V All rights reserved.
KeywordGaSb coincidence Doppler broadening positron annihilation defect
DOI10.1016/j.physleta.2004.09.056
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000225044500017
PublisherELSEVIER SCIENCE BV
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/81375
Corresponding AuthorWang, Z
Affiliation1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
2.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing, Peoples R China
Recommended Citation
GB/T 7714
Hu, WG,Wang, Z,Su, BF,et al. Gallium antisite defect and residual acceptors in undoped GaSb[J]. PHYSICS LETTERS A,2004,332(3-4):286-290.
APA Hu, WG,Wang, Z,Su, BF,Dai, YQ,Wang, SJ,&Zhao, YW.(2004).Gallium antisite defect and residual acceptors in undoped GaSb.PHYSICS LETTERS A,332(3-4),286-290.
MLA Hu, WG,et al."Gallium antisite defect and residual acceptors in undoped GaSb".PHYSICS LETTERS A 332.3-4(2004):286-290.
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