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Microstructure and PTCR effect of La-doped BaPbO3 ceramics
Li, ZC; Zhang, H; Bergman, B
Corresponding AuthorLi, ZC(li@mse.kth.se)
2004-03-01
Source PublicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
Volume15Issue:3Pages:183-186
AbstractLa-doped BaPbO3 ceramics were prepared by using BaCO3 and PbO. Electrical properties and microstructure of the ceramics were studied. The results show a thin surface layer with a very low resistivity, and the interior of the ceramics with the characteristics of positive temperature coefficient of resistivity (PTCR). The PTCR behavior was related to the La content. The investigation by scanning electron microscopy and transmission electron microscopy revealed that the low resistivity of the surface layer was due to formation of a nano-size BaPbO3 phase with metallic properties. (C) 2004 Kluwer Academic Publishers.
Indexed BySCI
Language英语
WOS Research AreaEngineering ; Materials Science ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000187939000010
PublisherKLUWER ACADEMIC PUBL
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/81397
Corresponding AuthorLi, ZC
Affiliation1.Royal Inst Technol, Dept Mat Sci & Engn, Div Ceram, S-10044 Stockholm, Sweden
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Li, ZC,Zhang, H,Bergman, B. Microstructure and PTCR effect of La-doped BaPbO3 ceramics[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2004,15(3):183-186.
APA Li, ZC,Zhang, H,&Bergman, B.(2004).Microstructure and PTCR effect of La-doped BaPbO3 ceramics.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,15(3),183-186.
MLA Li, ZC,et al."Microstructure and PTCR effect of La-doped BaPbO3 ceramics".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 15.3(2004):183-186.
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