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Microstructure and PTCR effect of La-doped BaPbO3 ceramics
Li, ZC; Zhang, H; Bergman, B
通讯作者Li, ZC(li@mse.kth.se)
2004-03-01
发表期刊JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
卷号15期号:3页码:183-186
摘要La-doped BaPbO3 ceramics were prepared by using BaCO3 and PbO. Electrical properties and microstructure of the ceramics were studied. The results show a thin surface layer with a very low resistivity, and the interior of the ceramics with the characteristics of positive temperature coefficient of resistivity (PTCR). The PTCR behavior was related to the La content. The investigation by scanning electron microscopy and transmission electron microscopy revealed that the low resistivity of the surface layer was due to formation of a nano-size BaPbO3 phase with metallic properties. (C) 2004 Kluwer Academic Publishers.
收录类别SCI
语种英语
WOS研究方向Engineering ; Materials Science ; Physics
WOS类目Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:000187939000010
出版者KLUWER ACADEMIC PUBL
引用统计
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/81397
通讯作者Li, ZC
作者单位1.Royal Inst Technol, Dept Mat Sci & Engn, Div Ceram, S-10044 Stockholm, Sweden
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
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GB/T 7714
Li, ZC,Zhang, H,Bergman, B. Microstructure and PTCR effect of La-doped BaPbO3 ceramics[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2004,15(3):183-186.
APA Li, ZC,Zhang, H,&Bergman, B.(2004).Microstructure and PTCR effect of La-doped BaPbO3 ceramics.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,15(3),183-186.
MLA Li, ZC,et al."Microstructure and PTCR effect of La-doped BaPbO3 ceramics".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 15.3(2004):183-186.
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