Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs

doi:10.1016/j.mssp.2003.10.002

IMR OpenIR

	Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs
	Li, ZC ; Zhang, H ; Xu, YB
通讯作者	Li, ZC(zhchli@imr.ac.cn)
	2004-02-01
发表期刊	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN	1369-8001
卷号	7 期号:1-2 页码:19-25
摘要	In situ observation of the nucleation and growth stimulated by an electron beam in amorphous GaAs was performed using a high-resolution electron microscopy. The results showed that the crystallization was closely related to the current density of the electron beam. Crystallization could not take place when the current density was 50 pA/cm(2), nanocrystals with the random orientation formed under the 74 pA/cm(2) electron beam, large grains and twining structure formed during the crystallization induced by the 93 pA/cm(2) electron beam. Ionization process and electron-beam heating were suggested to be the possible mechanisms for the irradiation-induced crystallization. (C) 2004 Elsevier Ltd. All rights reserved.
关键词	amorphous GaAs electron beam irradiation crystallization electron microscopy
DOI	10.1016/j.mssp.2003.10.002
收录类别	SCI
语种	英语
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000223542600004
出版者	ELSEVIER SCI LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/81480
通讯作者	Li, ZC
作者单位	1.Royal Inst Technol, Dept Mat Sci & Engn, S-10044 Stockholm, Sweden 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Li, ZC,Zhang, H,Xu, YB. Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2004,7(1-2):19-25.
APA	Li, ZC,Zhang, H,&Xu, YB.(2004).Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,7(1-2),19-25.
MLA	Li, ZC,et al."Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 7.1-2(2004):19-25.