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Study on the perfection of in situ P-injection synthesis LEC-InP single crystals
Zhou, XL; Zhao, YW; Sun, NF; Yang, GY; Xu, YQ; Sun, TN
Corresponding AuthorZhou, XL(tnsun@heinfo.net)
2004-03-15
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume264Issue:1-3Pages:17-20
AbstractUndoped, S-doped and Fe-doped InP crystals with diameter up to 4-inch have been pulled in drop 10 0 drop -direction under P-rich condition by a rapid P-injection in situ synthesis liquid encapsulated Czochralski (LEC) method. High speed photoluminescence mapping, etch-pit density (EPD) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. Dislocations and electrical homogeneity of these samples are investigated and compared. By controlling the thermal field and the solid-liquid interface shape, 4-inch low-EPD InP single crystals have been successfully grown by the rapid P-injection synthesis LEC method. The EPD across the wafer of the ingots is less than 5 x 10(4) cm(-2). Cluster defects with a pore center are observed in the P-rich LEC grown InP ingots. These defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. The uniformity of the PL intensity across the wafer is influenced by these defects. (C) 2004 Elsevier B.V. All rights reserved.
Keywordetch-pit density phosphorus-rich PL-mapping indium phosphide
DOI10.1016/j.jcrysgro.2003.12.042
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000220345400004
PublisherELSEVIER SCIENCE BV
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/81489
Corresponding AuthorZhou, XL
Affiliation1.Hebei Semicond Res Inst, Hebei 050051, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Zhou, XL,Zhao, YW,Sun, NF,et al. Study on the perfection of in situ P-injection synthesis LEC-InP single crystals[J]. JOURNAL OF CRYSTAL GROWTH,2004,264(1-3):17-20.
APA Zhou, XL,Zhao, YW,Sun, NF,Yang, GY,Xu, YQ,&Sun, TN.(2004).Study on the perfection of in situ P-injection synthesis LEC-InP single crystals.JOURNAL OF CRYSTAL GROWTH,264(1-3),17-20.
MLA Zhou, XL,et al."Study on the perfection of in situ P-injection synthesis LEC-InP single crystals".JOURNAL OF CRYSTAL GROWTH 264.1-3(2004):17-20.
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