| Electron paramagnetic resonance parameters of Co2+ in GaP, InP, and GaAs semiconductors | |
| Zheng, WC; Wu, SY; Tang, S; Zi, J | |
| Corresponding Author | Zheng, WC(zhengwc1@163.com) |
| 2004-02-15 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| ISSN | 0021-8979 |
| Volume | 95Issue:4Pages:1945-1948 |
| Abstract | High-order perturbation formulas for the electron paramagnetic resonance g factor for a 3d(7) ion in cubic tetrahedral MX4 clusters are established from a cluster approach. In the formulas, not only the conventional contribution from the crystal-field (CF) mechanism, but also the contribution from charge-transfer (CT) (which is often omitted) are considered. Based on the formulas, the g-shifts Deltag (=g-g(s), where g(s)=2.0023) of Co2+ ions in III-V semiconductors GaP, InP, and GaAs are reasonably explained. It is found that the relative importance of the CT mechanism (characterized by Deltag(CT)/Deltag(CF)) increases with increasing covalency and hence with increasing atomic number of the ligand. Therefore, for 3d(n) ions in a strongly covalent crystal, the contributions to the g factor from both CF and CT mechanisms should be taken into account. (C) 2004 American Institute of Physics. |
| DOI | 10.1063/1.1644040 |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000188654100051 |
| Publisher | AMER INST PHYSICS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/81506 |
| Corresponding Author | Zheng, WC |
| Affiliation | 1.Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China 3.Fudan Univ, Natl Key Lab, Surface Phys Lab, Shanghai 200433, Peoples R China 4.Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China |
| Recommended Citation GB/T 7714 | Zheng, WC,Wu, SY,Tang, S,et al. Electron paramagnetic resonance parameters of Co2+ in GaP, InP, and GaAs semiconductors[J]. JOURNAL OF APPLIED PHYSICS,2004,95(4):1945-1948. |
| APA | Zheng, WC,Wu, SY,Tang, S,&Zi, J.(2004).Electron paramagnetic resonance parameters of Co2+ in GaP, InP, and GaAs semiconductors.JOURNAL OF APPLIED PHYSICS,95(4),1945-1948. |
| MLA | Zheng, WC,et al."Electron paramagnetic resonance parameters of Co2+ in GaP, InP, and GaAs semiconductors".JOURNAL OF APPLIED PHYSICS 95.4(2004):1945-1948. |
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