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一种适用于氢化物气相外延生长氮化镓膜的基片台
姜辛; 刘宝丹; 刘鲁生; 张兴来
2017-02-15
Rights Holder中国科学院金属研究所
Subtype实用新型
Patent Number201620792540.2
Document Type专利
Identifierhttp://ir.imr.ac.cn/handle/321006/81709
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
姜辛,刘宝丹,刘鲁生,等. 一种适用于氢化物气相外延生长氮化镓膜的基片台. 201620792540.2[P]. 2017-02-15.
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