Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy

doi:10.1016/j.jcrysgro.2004.07.057

IMR OpenIR

	Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy
	Xiang, WF ; Lu, HB ; Chen, ZH ; Lu, XB ; He, M ; Tian, H ; Zhou, YL ; Li, CR ; Ma, XL
通讯作者	Xiang, WF(xwf@aphy.iphy.ac.cn)
	2004-10-15
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	271 期号:1-2 页码:165-170
摘要	The LaAlO3 films were grown epitaxially on Si (100) substrates by inserting SrO or SrTiO3 buffer layer using a computer-controlled laser molecular beam epitaxy system. Structural characterization indicated that the LaAlO3 films were two-dimensional layer-by-layer growth. The atomic force microscopy observations showed that the surfaces of the epitaxial LaAlO3 films were atomically smooth. The crystallinity of the LaAlO3 films determined by X-ray diffraction and high-resolution transmission electron microscopy was a single-crystalline structure. After being annealed at 1050 degreesC in N-2 for 5 min, the crystallinity of the LaAlO3 film improved obviously. The successful LaAlO3/SrO/Si and LaAlO3/SrTiO3/Si epitaxial growth predicted that the possibility of the development of 3D heterostructrues on Si in a new generation of microelectronics devices. (C) 2004 Elsevier B.V. All rights reserved.
关键词	annealing reflection high-energy electron diffraction X-ray diffraction epitaxial growth laser molecular beam epitaxy LaAlO3 film
DOI	10.1016/j.jcrysgro.2004.07.057
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000224629300023
出版者	ELSEVIER SCIENCE BV
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/81746
通讯作者	Xiang, WF
作者单位	1.Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China 2.Chinese Acad Sci, Ctr Condensed Mat Phys, Beijing 100080, Peoples R China 3.Peking Univ, Inst Microelect, Digital DNA Labs, Beijing 100871, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110015, Peoples R China
推荐引用方式 GB/T 7714	Xiang, WF,Lu, HB,Chen, ZH,et al. Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2004,271(1-2):165-170.
APA	Xiang, WF.,Lu, HB.,Chen, ZH.,Lu, XB.,He, M.,...&Ma, XL.(2004).Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,271(1-2),165-170.
MLA	Xiang, WF,et al."Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 271.1-2(2004):165-170.