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Temperature-dependent fatigue behaviors of ferroelectric ABO(3)-type and layered perovskite oxide thin films
Yuan, GL; Liu, JM; Wang, YP; Wu, D; Zhang, ST; Shao, QY; Liu, ZG
通讯作者Liu, JM()
2004-04-26
发表期刊APPLIED PHYSICS LETTERS
ISSN0003-6951
卷号84期号:17页码:3352-3354
摘要The temperature-dependent dielectric and ferroelectric fatigue behaviors of ABO(3)-type perovskite thin films Pb(Zr0.52Ti0.48)O-3 (PZT) and Pb0.75La0.25TiO3 (PLT) and layered Aurivillius thin films SrBi2Ta2O9 (SBT) and Bi3.25La0.75Ti3O12 (BLT) with Pt electrodes are studied. The improved fatigue resistance of PZT and PLT at a low temperature can be explained by the defect-induced suppression of domain switch/nucleation near the film/electrode interface, which requires a long-range diffusion of defects and charges. It is argued that the fatigue effect of SBT and BLT is attributed to the competition between domain-wall pinning and depinning. The perovskitelike slabs and/or (Bi2O2)(2+) layers act as barriers for long-range diffusion of defects and charges, resulting in localization of the defects and charges. Thus, the fatigued SBT and BLT can be easily rejuvenated by a high electric field over a wide temperature range. (C) 2004 American Institute of Physics.
DOI10.1063/1.1734685
收录类别SCI
语种英语
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:000220958100044
出版者AMER INST PHYSICS
引用统计
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/81799
通讯作者Liu, JM
作者单位1.Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China
2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang, Peoples R China
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Yuan, GL,Liu, JM,Wang, YP,et al. Temperature-dependent fatigue behaviors of ferroelectric ABO(3)-type and layered perovskite oxide thin films[J]. APPLIED PHYSICS LETTERS,2004,84(17):3352-3354.
APA Yuan, GL.,Liu, JM.,Wang, YP.,Wu, D.,Zhang, ST.,...&Liu, ZG.(2004).Temperature-dependent fatigue behaviors of ferroelectric ABO(3)-type and layered perovskite oxide thin films.APPLIED PHYSICS LETTERS,84(17),3352-3354.
MLA Yuan, GL,et al."Temperature-dependent fatigue behaviors of ferroelectric ABO(3)-type and layered perovskite oxide thin films".APPLIED PHYSICS LETTERS 84.17(2004):3352-3354.
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